Tungsten Oxide as a Gate Dielectric for Highly Transparent and Temperature-Stable Zinc-Oxide-Based Thin-Film Transistors

Published 2011 View Full Article

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Title
Tungsten Oxide as a Gate Dielectric for Highly Transparent and Temperature-Stable Zinc-Oxide-Based Thin-Film Transistors
Authors
Keywords
-
Journal
ADVANCED MATERIALS
Volume 23, Issue 45, Pages 5383-5386
Publisher
Wiley
Online
2011-10-14
DOI
10.1002/adma.201103087
References
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