Low-temperature processable amorphous In-W-O thin-film transistors with high mobility and stability
Published 2014 View Full Article
- Home
- Publications
- Publication Search
- Publication Details
Title
Low-temperature processable amorphous In-W-O thin-film transistors with high mobility and stability
Authors
Keywords
-
Journal
APPLIED PHYSICS LETTERS
Volume 104, Issue 15, Pages 152103
Publisher
AIP Publishing
Online
2014-04-17
DOI
10.1063/1.4871511
References
Ask authors/readers for more resources
Related references
Note: Only part of the references are listed.- Stable amorphous In2O3-based thin-film transistors by incorporating SiO2 to suppress oxygen vacancies
- (2014) Nobuhiko Mitoma et al. APPLIED PHYSICS LETTERS
- Thin-film transistors fabricated by low-temperature process based on Ga- and Zn-free amorphous oxide semiconductor
- (2013) Shinya Aikawa et al. APPLIED PHYSICS LETTERS
- Effects of dopants in InOx-based amorphous oxide semiconductors for thin-film transistor applications
- (2013) Shinya Aikawa et al. APPLIED PHYSICS LETTERS
- High performance In2O3 thin film transistors using chemically derived aluminum oxide dielectric
- (2013) Pradipta K. Nayak et al. APPLIED PHYSICS LETTERS
- Two-step Electrical Degradation Behavior in α-InGaZnO Thin-film Transistor Under Gate-bias Stress
- (2013) Fa-Hsyang Chen et al. IEEE ELECTRON DEVICE LETTERS
- Study on the Effects of Zr-Incorporated InZnO Thin-Film Transistors Using a Solution Process
- (2013) Tae Hoon Jeong et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- Improvement in the Bias Stability of Zinc-Tin Oxide Thin-Film Transistors by Hafnium Doping
- (2013) Dong-Suk Han et al. JOURNAL OF ELECTRONIC MATERIALS
- Dependence of annealing on stability of transparent amorphous InGaZnO thin film transistor
- (2013) Xifeng Li et al. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
- Effect of Mg Doping on the Electrical Characteristics of High Performance IGZO Thin Film Transistors
- (2013) Hung-Chi Wu et al. ECS Journal of Solid State Science and Technology
- Anomalous behavior of negative bias illumination stress instability in an indium zinc oxide transistor: A cation combinatorial approach
- (2012) Seungha Oh et al. APPLIED PHYSICS LETTERS
- Role of ZrO2 incorporation in the suppression of negative bias illumination-induced instability in Zn–Sn–O thin film transistors
- (2011) Bong Seob Yang et al. APPLIED PHYSICS LETTERS
- Effects of excess oxygen on operation characteristics of amorphous In-Ga-Zn-O thin-film transistors
- (2011) Keisuke Ide et al. APPLIED PHYSICS LETTERS
- Low-temperature soluble InZnO thin film transistors by microwave annealing
- (2011) Keunkyu Song et al. JOURNAL OF CRYSTAL GROWTH
- Improvement of bias stability of indium zinc oxide thin film transistors by the incorporation of hafnium fabricated by radio-frequency magnetron sputtering
- (2011) Eugene Chong et al. THIN SOLID FILMS
- The influence of hafnium doping on bias stability in zinc oxide thin film transistors
- (2011) Woong-Sun Kim et al. THIN SOLID FILMS
- Effects of low-temperature ozone annealing on operation characteristics of amorphous In–Ga–Zn–O thin-film transistors
- (2011) Keisuke Ide et al. THIN SOLID FILMS
- Review of recent developments in amorphous oxide semiconductor thin-film transistor devices
- (2011) Joon Seok Park et al. THIN SOLID FILMS
- Fully Transparent Non-volatile Memory Thin-Film Transistors Using an Organic Ferroelectric and Oxide Semiconductor Below 200 °C
- (2010) Sung-Min Yoon et al. ADVANCED FUNCTIONAL MATERIALS
- Role of silicon in silicon-indium-zinc-oxide thin-film transistor
- (2010) Eugene Chong et al. APPLIED PHYSICS LETTERS
- High stability of amorphous hafnium-indium-zinc-oxide thin film transistor
- (2010) Eugene Chong et al. APPLIED PHYSICS LETTERS
- Instability in threshold voltage and subthreshold behavior in Hf–In–Zn–O thin film transistors induced by bias-and light-stress
- (2010) Khashayar Ghaffarzadeh et al. APPLIED PHYSICS LETTERS
- Amorphous silicon–indium–zinc oxide semiconductor thin film transistors processed below 150 °C
- (2010) Eugene Chong et al. APPLIED PHYSICS LETTERS
- Present status of amorphous In–Ga–Zn–O thin-film transistors
- (2010) Toshio Kamiya et al. SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS
- Environment-dependent metastability of passivation-free indium zinc oxide thin film transistor after gate bias stress
- (2009) Po-Tsun Liu et al. APPLIED PHYSICS LETTERS
- Amorphous hafnium-indium-zinc oxide semiconductor thin film transistors
- (2009) Chang-Jung Kim et al. APPLIED PHYSICS LETTERS
- Experimental and Theoretical Analysis of Degradation in Ga2O3–In2O3–ZnO Thin-Film Transistors
- (2009) Mami Fujii et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- Novel ZrInZnO Thin-film Transistor with Excellent Stability
- (2008) Jin-Seong Park et al. ADVANCED MATERIALS
- Transparent Al–Zn–Sn–O thin film transistors prepared at low temperature
- (2008) Doo-Hee Cho et al. APPLIED PHYSICS LETTERS
- A Comparison of the Performance and Stability of ZnO-TFTs With Silicon Dioxide and Nitride as Gate Insulators
- (2008) R. B. M. Cross et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Thermal Analysis of Degradation in Ga2O3–In2O3–ZnO Thin-Film Transistors
- (2008) Mami Fujii et al. JAPANESE JOURNAL OF APPLIED PHYSICS
Discover Peeref hubs
Discuss science. Find collaborators. Network.
Join a conversationPublish scientific posters with Peeref
Peeref publishes scientific posters from all research disciplines. Our Diamond Open Access policy means free access to content and no publication fees for authors.
Learn More