Impact of Metal Salt Precursor on Low-Temperature Annealed Solution-Derived Ga-doped In2O3 Semiconductor for Thin-Film Transistors

Published 2011 View Full Article

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Title
Impact of Metal Salt Precursor on Low-Temperature Annealed Solution-Derived Ga-doped In2O3 Semiconductor for Thin-Film Transistors
Authors
Keywords
-
Journal
Journal of Physical Chemistry C
Volume 115, Issue 23, Pages 11773-11780
Publisher
American Chemical Society (ACS)
Online
2011-05-25
DOI
10.1021/jp202522s

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