Gate Capacitance-Dependent Field-Effect Mobility in Solution-Processed Oxide Semiconductor Thin-Film Transistors
Published 2014 View Full Article
- Home
- Publications
- Publication Search
- Publication Details
Title
Gate Capacitance-Dependent Field-Effect Mobility in Solution-Processed Oxide Semiconductor Thin-Film Transistors
Authors
Keywords
-
Journal
ADVANCED FUNCTIONAL MATERIALS
Volume 24, Issue 29, Pages 4689-4697
Publisher
Wiley
Online
2014-04-25
DOI
10.1002/adfm.201400588
References
Ask authors/readers for more resources
Related references
Note: Only part of the references are listed.- UV-Visible Spectroscopic Analysis of Electrical Properties in Alkali Metal-Doped Amorphous Zinc Tin Oxide Thin-Film Transistors
- (2013) Keon-Hee Lim et al. ADVANCED MATERIALS
- Interface engineering for suppression of flat-band voltage shift in a solution-processed ZnO/polymer dielectric thin film transistor
- (2013) Kyongjun Kim et al. Journal of Materials Chemistry C
- Water adsorption effects of nitrate ion coordinated Al2O3 dielectric for high performance metal-oxide thin-film transistor
- (2013) Jee Ho Park et al. Journal of Materials Chemistry C
- Solution-processed amorphous hafnium-lanthanum oxide gate insulator for oxide thin-film transistors
- (2013) Jieun Ko et al. Journal of Materials Chemistry C
- Transparent High-Performance Thin Film Transistors from Solution-Processed SnO2/ZrO2Gel-like Precursors
- (2012) Jaewon Jang et al. ADVANCED MATERIALS
- Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances
- (2012) E. Fortunato et al. ADVANCED MATERIALS
- Low-Temperature, Solution-Processed and Alkali Metal Doped ZnO for High-Performance Thin-Film Transistors
- (2012) Si Yun Park et al. ADVANCED MATERIALS
- Flexible metal-oxide devices made by room-temperature photochemical activation of sol–gel films
- (2012) Yong-Hoon Kim et al. NATURE
- Patterning of Flexible Transparent Thin-Film Transistors with Solution-Processed ZnO Using the Binary Solvent Mixture
- (2011) Kyongjun Kim et al. ADVANCED FUNCTIONAL MATERIALS
- Transport Physics and Device Modeling of Zinc Oxide Thin-Film Transistors Part I: Long-Channel Devices
- (2011) Fabrizio Torricelli et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- An Explicit Analytic Compact Model for Nanocrystalline Zinc Oxide Thin-Film Transistors
- (2011) Francisco J. Garcia-Sanchez et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Low-temperature fabrication of high-performance metal oxide thin-film electronics via combustion processing
- (2011) Myung-Gil Kim et al. NATURE MATERIALS
- High-mobility low-temperature ZnO transistors with low-voltage operation
- (2010) Hyojin Bong et al. APPLIED PHYSICS LETTERS
- Low-temperature, high-performance solution-processed metal oxide thin-film transistors formed by a ‘sol–gel on chip’ process
- (2010) K. K. Banger et al. NATURE MATERIALS
- A Low Operating Voltage ZnO Thin Film Transistor Using a High-κ HfLaO Gate Dielectric
- (2009) N. C. Su et al. ELECTROCHEMICAL AND SOLID STATE LETTERS
- Origins of High Mobility and Low Operation Voltage of Amorphous Oxide TFTs: Electronic Structure, Electron Transport, Defects and Doping
- (2009) T. Kamiya et al. Journal of Display Technology
- Solution-deposited sodium beta-alumina gate dielectrics for low-voltage and transparent field-effect transistors
- (2009) Bhola N. Pal et al. NATURE MATERIALS
- Aqueous Inorganic Inks for Low-Temperature Fabrication of ZnO TFTs
- (2008) Stephen T. Meyers et al. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
- Disorder and instability processes in amorphous conducting oxides
- (2008) John Robertson PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
Create your own webinar
Interested in hosting your own webinar? Check the schedule and propose your idea to the Peeref Content Team.
Create NowBecome a Peeref-certified reviewer
The Peeref Institute provides free reviewer training that teaches the core competencies of the academic peer review process.
Get Started