Role of Gallium Doping in Dramatically Lowering Amorphous-Oxide Processing Temperatures for Solution-Derived Indium Zinc Oxide Thin-Film Transistors

Title
Role of Gallium Doping in Dramatically Lowering Amorphous-Oxide Processing Temperatures for Solution-Derived Indium Zinc Oxide Thin-Film Transistors
Authors
Keywords
-
Journal
ADVANCED MATERIALS
Volume 22, Issue 12, Pages 1346-1350
Publisher
Wiley
Online
2009-12-28
DOI
10.1002/adma.200902450

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