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Scale-free ferroelectricity induced by flat phonon bands in HfO2

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The future of ferroelectric field-effect transistor technology

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Non-Volatile Ferroelectric FETs Using 5-nm Hf0.5Zr0.5O2 With High Data Retention and Read Endurance for 1T Memory Applications

(2019) K.-T. Chen et al.   IEEE ELECTRON DEVICE LETTERS

Memory Window and Endurance Improvement of Hf0.5Zr0.5O2-Based FeFETs with ZrO2 Seed Layers Characterized by Fast Voltage Pulse Measurements

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Challenges to Partial Switching of Hf0.8Zr0.2O2 Gated Ferroelectric FET for Multilevel/Analog or Low-Voltage Memory Operation

(2019) Korok Chatterjee et al.   IEEE ELECTRON DEVICE LETTERS

Stable Subloop Behavior in Ferroelectric Si-Doped HfO2

(2019) Kyoungjun Lee et al.   ACS Applied Materials & Interfaces

Critical Role of Interlayer in Hf0.5Zr0.5O2 Ferroelectric FET Nonvolatile Memory Performance

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Write Disturb in Ferroelectric FETs and Its Implication for 1T-FeFET AND Memory Arrays

(2018) Kai Ni et al.   IEEE ELECTRON DEVICE LETTERS

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(2016) An Chen   SOLID-STATE ELECTRONICS

Memory leads the way to better computing

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