Challenges to Partial Switching of Hf0.8Zr0.2O2 Gated Ferroelectric FET for Multilevel/Analog or Low-Voltage Memory Operation

Published 2019 View Full Article

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Title
Challenges to Partial Switching of Hf0.8Zr0.2O2 Gated Ferroelectric FET for Multilevel/Analog or Low-Voltage Memory Operation
Authors
Keywords
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Journal
IEEE ELECTRON DEVICE LETTERS
Volume 40, Issue 9, Pages 1423-1426
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2019-07-27
DOI
10.1109/led.2019.2931430

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