Robustly stable intermediate memory states in HfO2−based ferroelectric field−effect transistors
出版年份 2021 全文链接
标题
Robustly stable intermediate memory states in HfO2−based ferroelectric field−effect transistors
作者
关键词
Ferroelectric field−effect transistors (FeFETs), Hf, 0.5, Zr, 0.5, O, 2, (HZO), Multiple memory states, Write/read disturb, Retention
出版物
Journal of Materiomics
Volume -, Issue -, Pages -
出版商
Elsevier BV
发表日期
2021-11-12
DOI
10.1016/j.jmat.2021.11.003
参考文献
相关参考文献
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