Non-Volatile Ferroelectric FETs Using 5-nm Hf0.5Zr0.5O2 With High Data Retention and Read Endurance for 1T Memory Applications

Published 2019 View Full Article

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Title
Non-Volatile Ferroelectric FETs Using 5-nm Hf0.5Zr0.5O2 With High Data Retention and Read Endurance for 1T Memory Applications
Authors
Keywords
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Journal
IEEE ELECTRON DEVICE LETTERS
Volume 40, Issue 3, Pages 399-402
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2019-02-01
DOI
10.1109/led.2019.2896231

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