Electric Field Gradient‐Controlled Domain Switching for Size Effect‐Resistant Multilevel Operations in HfO 2 ‐Based Ferroelectric Field‐Effect Transistor

Enhanced ferroelectricity in ultrathin films grown directly on silicon

(2020) Suraj S. Cheema et al.   NATURE

Memory devices and applications for in-memory computing

(2020) Abu Sebastian et al.   Nature Nanotechnology

Scale-free ferroelectricity induced by flat phonon bands in HfO2

(2020) Hyun-Jae Lee et al.   SCIENCE

Multi-Domain Negative Capacitance Effects in Metal-Ferroelectric-Insulator-Semiconductor/Metal Stacks: A Phase-field Simulation Based Study

(2020) Atanu K. Saha et al.   Scientific Reports

The future of ferroelectric field-effect transistor technology

(2020) Asif Islam Khan et al.   Nature Electronics

Ferroelectric Analog Synaptic Transistors

(2019) Min-Kyu Kim et al.   NANO LETTERS

Phase field modeling of domain dynamics and polarization accumulation in ferroelectric HZO

(2019) Atanu K. Saha et al.   APPLIED PHYSICS LETTERS

Performance Improvement of Hf0.5Zr0.5O2-Based Ferroelectric-Field-Effect Transistors With ZrO2 Seed Layers

(2019) Wenwu Xiao et al.   IEEE ELECTRON DEVICE LETTERS

Theory and Experiment of Antiferroelectric (AFE) Si-Doped Hafnium Oxide (HSO) Enhanced Floating-Gate Memory

(2019) T. Ali et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Grain Size Engineering of Ferroelectric Zr-doped HfO2 for the Highly Scaled Devices Applications

(2019) Jiajia Liao et al.   IEEE ELECTRON DEVICE LETTERS

First Demonstration of a Logic-process Compatible Junctionless Ferroelectric FinFET Synapse for Neuromorphic Applications

(2018) Myungsoo Seo et al.   IEEE ELECTRON DEVICE LETTERS

Random Number Generation Based on Ferroelectric Switching

(2018) Halid Mulaosmanovic et al.   IEEE ELECTRON DEVICE LETTERS

Critical Role of Interlayer in Hf0.5Zr0.5O2 Ferroelectric FET Nonvolatile Memory Performance

(2018) Kai Ni et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

From biomaterial-based data storage to bio-inspired artificial synapse

(2018) Ziyu Lv et al.   Materials Today

Ferroelectric Hf0.5Zr0.5O2 Thin Films: A Review of Recent Advances

(2018) Si Joon Kim et al.   JOM

A ferroelectric field effect transistor based synaptic weight cell

(2018) Matthew Jerry et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

3.3 V write-voltage Ir/Ca0.2Sr0.8Bi2Ta2O9/HfO2/Si ferroelectric-gate field-effect transistors with 109endurance and good retention

(2017) Wei Zhang et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Three-dimensional integration of nanotechnologies for computing and data storage on a single chip

(2017) Max M. Shulaker et al.   NATURE

Ferroelectricity and Antiferroelectricity of Doped Thin HfO2-Based Films

(2015) Min Hyuk Park et al.   ADVANCED MATERIALS

Optimization of Conductance Change in Pr1–xCaxMnO3-Based Synaptic Devices for Neuromorphic Systems

(2015) Jun-Woo Jang et al.   IEEE ELECTRON DEVICE LETTERS

The big challenges of big data

(2013) Vivien Marx   NATURE

Multilevel Information Storage in Ferroelectric Polymer Memories

(2011) Ashutosh K. Tripathi et al.   ADVANCED MATERIALS

A 60 nm channel length ferroelectric-gate field-effect transistor capable of fast switching and multilevel programming

(2011) Yukihiro Kaneko et al.   APPLIED PHYSICS LETTERS

Capacitance-voltage and retention characteristics of Pt/SrBi2Ta2O9/HfO2/Si structures with various buffer layer thickness

(2009) M. H. Tang et al.   APPLIED PHYSICS LETTERS