GaN substrates having a low dislocation density and a small off-angle variation prepared by hydride vapor phase epitaxy and maskless-3D

Hydride Vapor‐Phase Epitaxy Reactor for Bulk GaN Growth

(2019) Vladislav Voronenkov et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Three-dimensional imaging of threading dislocations in GaN crystals using two-photon excitation photoluminescence

(2018) Tomoyuki Tanikawa et al.   Applied Physics Express

Correlation between dislocations and leakage current of p-n diodes on a free-standing GaN substrate

(2018) Shigeyoshi Usami et al.   APPLIED PHYSICS LETTERS

Wafer-Level Donor Uniformity Improvement by Substrate Off-Angle Control for Vertical GaN-on-GaN Power Switching Devices

(2017) Fumimasa Horikiri et al.   IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING

Curvature and bow of bulk GaN substrates

(2016) Humberto M. Foronda et al.   JOURNAL OF APPLIED PHYSICS

Nature of V-Shaped Defects in GaN

(2013) Vladislav Voronenkov et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

GaN Lateral Overgrowth by Hydride Vapor Phase Epitaxy through Nanometer-Size Channels Fabricated with Nanoimprint Lithography

(2013) Akira Usui et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Bulk GaN based violet light-emitting diodes with high efficiency at very high current density

(2012) Michael J. Cich et al.   APPLIED PHYSICS LETTERS

InGaN-based 518 and 488 nm laser diodes on c-plane GaN substrate

(2010) Takashi Miyoshi et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Bulk GaN crystals grown by HVPE

(2009) Kenji Fujito et al.   JOURNAL OF CRYSTAL GROWTH

The effect of wafer curvature on x-ray rocking curves from gallium nitride films

(2008) M. A. Moram et al.   JOURNAL OF APPLIED PHYSICS