Analysis of intrinsic reverse leakage current resulting from band-to-band tunneling in dislocation-free GaN p–n junctions

Impact ionization coefficients and critical electric field in GaN

(2021) Takuya Maeda et al.   JOURNAL OF APPLIED PHYSICS

Increase of reverse leakage current at homoepitaxial GaN p-n junctions induced by continuous forward current stress

(2021) Tetsuo Narita et al.   APPLIED PHYSICS LETTERS

High quality GaN crystal grown by hydride vapor-phase epitaxy on SCAATTM

(2020) Kenji Iso et al.   Applied Physics Express

Tunneling Current in 4H-SiC p-n Junction Diodes

(2020) M. Kaneko et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

GaN substrates having a low dislocation density and a small off-angle variation prepared by hydride vapor phase epitaxy and maskless-3D

(2020) Takehiro Yoshida et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Design and Fabrication of GaN p-n Junction Diodes With Negative Beveled-Mesa Termination

(2019) Takuya Maeda et al.   IEEE ELECTRON DEVICE LETTERS

Structural and Electrical Characterization of 2” Ammonothermal Free-Standing GaN Wafers. Progress toward Pilot Production

(2019) Daryl Key et al.   Materials

Demonstration of 1200 V / 1.4 mΩ cm2 vertical GaN planar MOSFET fabricated by an all ion implantation process

(2019) Ryo Tanaka et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Experimental characterization of impact ionization coefficients for electrons and holes in GaN grown on bulk GaN substrates

(2018) Lina Cao et al.   APPLIED PHYSICS LETTERS

Correlation between dislocations and leakage current of p-n diodes on a free-standing GaN substrate

(2018) Shigeyoshi Usami et al.   APPLIED PHYSICS LETTERS

The origin of carbon-related carrier compensation in p-type GaN layers grown by MOVPE

(2018)   JOURNAL OF APPLIED PHYSICS

First Demonstration of AlSiO as Gate Dielectric in GaN FETs; Applied to a High Performance OG-FET

(2017) Chirag Gupta et al.   IEEE ELECTRON DEVICE LETTERS

Challenges and future perspectives in HVPE-GaN growth on ammonothermal GaN seeds

(2016) M Bockowski et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

The Impact of Defects on GaN Device Behavior: Modeling Dislocations, Traps, and Pits

(2016) Victor Moroz et al.   ECS Journal of Solid State Science and Technology

1.8 mΩ·cm2vertical GaN-based trench metal–oxide–semiconductor field-effect transistors on a free-standing GaN substrate for 1.2-kV-class operation

(2015) Tohru Oka et al.   Applied Physics Express

High breakdown single-crystal GaN p-n diodes by molecular beam epitaxy

(2015) Meng Qi et al.   APPLIED PHYSICS LETTERS

Origin and Control of OFF-State Leakage Current in GaN-on-Si Vertical Diodes

(2015) Yuhao Zhang et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Reliability studies of vertical GaN devices based on bulk GaN substrates

(2015) Isik C. Kizilyalli et al.   MICROELECTRONICS RELIABILITY

1.5-kV and 2.2-m \(\Omega \) -cm \(^{2}\) Vertical GaN Transistors on Bulk-GaN Substrates

(2014) Hui Nie et al.   IEEE ELECTRON DEVICE LETTERS

Transport-mechanism analysis of the reverse leakage current in GaInN light-emitting diodes

(2011) Qifeng Shan et al.   APPLIED PHYSICS LETTERS