Progress and future prospects of negative capacitance electronics: A materials perspective

Physical chemistry of the TiN/Hf0.5Zr0.5O2 interface

(2020) W. Hamouda et al.   JOURNAL OF APPLIED PHYSICS

Is negative capacitance FET a steep-slope logic switch?

(2020) Wei Cao et al.   Nature Communications

The Past, the Present, and the Future of Ferroelectric Memories

(2020) T. Mikolajick et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Enhanced ferroelectricity in ultrathin films grown directly on silicon

(2020) Suraj S. Cheema et al.   NATURE

A highly CMOS compatible hafnia-based ferroelectric diode

(2020) Qing Luo et al.   Nature Communications

Scale-free ferroelectricity induced by flat phonon bands in HfO2

(2020) Hyun-Jae Lee et al.   SCIENCE

Polarization Switching and Negative Capacitance in Epitaxial PbZr0.2Ti0.8O3 Thin Films

(2020) Lucian Pintilie et al.   Physical Review Applied

The atomic-scale domain wall structure and motion in HfO2-based ferroelectrics: A first-principle study

(2020) Weitong Ding et al.   ACTA MATERIALIA

Impact of Read Operation on the Performance of HfO2-Based Ferroelectric FETs

(2020) Halid Mulaosmanovic et al.   IEEE ELECTRON DEVICE LETTERS

Improved Ferroelectric/Semiconductor Interface Properties in Hf0.5Zr0.5O2 Ferroelectric FETs by Low-Temperature Annealing

(2020) Kasidit Toprasertpong et al.   IEEE ELECTRON DEVICE LETTERS

What’s next for negative capacitance electronics?

(2020) Michael Hoffmann et al.   Nature Electronics

Unveiling the double-well energy landscape in a ferroelectric layer

(2019) Michael Hoffmann et al.   NATURE

Ferroelectric negative capacitance

(2019) Jorge Íñiguez et al.   Nature Reviews Materials

Proposal for Capacitance Matching in Negative Capacitance Field-Effect Transistors

(2019) Harshit Agarwal et al.   IEEE ELECTRON DEVICE LETTERS

A critical review of recent progress on negative capacitance field-effect transistors

(2019) Muhammad A. Alam et al.   APPLIED PHYSICS LETTERS

Transient Negative Capacitance Effect in Atomic-Layer-Deposited Al2 O3 /Hf0.3 Zr0.7 O2 Bilayer Thin Film

(2019) Keum Do Kim et al.   ADVANCED FUNCTIONAL MATERIALS

Phase field modeling of domain dynamics and polarization accumulation in ferroelectric HZO

(2019) Atanu K. Saha et al.   APPLIED PHYSICS LETTERS

Modeling of Negative Capacitance in Ferroelectric Thin Films

(2019) Hyeon Woo Park et al.   ADVANCED MATERIALS

Negative Capacitance FET With 1.8-nm-Thick Zr-Doped HfO2 Oxide

(2019) Daewoong Kwon et al.   IEEE ELECTRON DEVICE LETTERS

Thickness-Dependent Asymmetric Potential Landscape and Polarization Relaxation in Ferroelectric Hf x Zr1− x O2 Thin Films through Interfacial Bound Charges

(2019) Ying Zhu et al.   Advanced Electronic Materials

Fluorite-structure antiferroelectrics

(2019) Min Hyuk Park et al.   REPORTS ON PROGRESS IN PHYSICS

Negative Capacitance for Electrostatic Supercapacitors

(2019) Michael Hoffmann et al.   Advanced Energy Materials

Local crystallographic phase detection and texture mapping in ferroelectric Zr doped HfO2 films by transmission-EBSD

(2019) M. Lederer et al.   APPLIED PHYSICS LETTERS

Anomalously Beneficial Gate-Length Scaling Trend of Negative Capacitance Transistors

(2019) Yu-Hung Liao et al.   IEEE ELECTRON DEVICE LETTERS

Recent Progress in Two‐Dimensional Ferroelectric Materials

(2019) Zhao Guan et al.   Advanced Electronic Materials

Near Threshold Capacitance Matching in a Negative Capacitance FET With 1 nm Effective Oxide Thickness Gate Stack

(2019) Daewoong Kwon et al.   IEEE ELECTRON DEVICE LETTERS

Nanoscopic studies of domain structure dynamics in ferroelectric La:HfO2 capacitors

(2018) P. Buragohain et al.   APPLIED PHYSICS LETTERS

Effects of high pressure nitrogen annealing on ferroelectric Hf0.5Zr0.5O2 films

(2018) Taeho Kim et al.   APPLIED PHYSICS LETTERS

Improved Subthreshold Swing and Short Channel Effect in FDSOI n-Channel Negative Capacitance Field Effect Transistors

(2018) Daewoong Kwon et al.   IEEE ELECTRON DEVICE LETTERS

NCFET Design Considering Maximum Interface Electric Field

(2018) Harshit Agarwal et al.   IEEE ELECTRON DEVICE LETTERS

Engineering Negative Differential Resistance in NCFETs for Analog Applications

(2018) Harshit Agarwal et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Critical Role of Interlayer in Hf0.5Zr0.5O2 Ferroelectric FET Nonvolatile Memory Performance

(2018) Kai Ni et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Lanthanum-Doped Hafnium Oxide: A Robust Ferroelectric Material

(2018) Uwe Schroeder et al.   INORGANIC CHEMISTRY

Ferroelectric negative capacitance domain dynamics

(2018) Michael Hoffmann et al.   JOURNAL OF APPLIED PHYSICS

On the stabilization of ferroelectric negative capacitance in nanoscale devices

(2018) Michael Hoffmann et al.   Nanoscale

Atomic Structure of Domain and Interphase Boundaries in Ferroelectric HfO2

(2018) Everett D. Grimley et al.   Advanced Materials Interfaces

Physical Origin of Transient Negative Capacitance in a Ferroelectric Capacitor

(2018) Sou-Chi Chang et al.   Physical Review Applied

Switching dynamics of ferroelectric Zr-doped HfO2

(2018) Cristobal Alessandri et al.   IEEE ELECTRON DEVICE LETTERS

Ferroelectricity mediated by ferroelastic domain switching in HfO2-based epitaxial thin films

(2018) Takao Shimizu et al.   APPLIED PHYSICS LETTERS

Modeling Transient Negative Capacitance in Steep-Slope FeFETs

(2018) Borna Obradovic et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

A rhombohedral ferroelectric phase in epitaxially strained Hf0.5Zr0.5O2 thin films

(2018) Yingfen Wei et al.   NATURE MATERIALS

Intrinsic speed limit of negative capacitance transistors

(2017) Korok Chatterjee et al.   IEEE ELECTRON DEVICE LETTERS

Device Exploration of NanoSheet Transistors for Sub-7-nm Technology Node

(2017) Doyoung Jang et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

A Simple Model of Negative Capacitance FET With Electrostatic Short Channel Effects

(2017) Zhipeng Dong et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Analysis of Drain-Induced Barrier Rising in Short-Channel Negative-Capacitance FETs and Its Applications

(2017) Junbeom Seo et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Voltage Drop in a Ferroelectric Single Layer Capacitor by Retarded Domain Nucleation

(2017) Yu Jin Kim et al.   NANO LETTERS

Surface and grain boundary energy as the key enabler of ferroelectricity in nanoscale hafnia-zirconia: a comparison of model and experiment

(2017) Min Hyuk Park et al.   Nanoscale

Steep-slope hysteresis-free negative capacitance MoS2 transistors

(2017) Mengwei Si et al.   Nature Nanotechnology

Si Doped Hafnium Oxide-A “Fragile” Ferroelectric System

(2017) Claudia Richter et al.   Advanced Electronic Materials

Ultrathin Hf0.5Zr0.5O2 Ferroelectric Films on Si

(2016) Anna Chernikova et al.   ACS Applied Materials & Interfaces

Direct Observation of Negative Capacitance in Polycrystalline Ferroelectric HfO2

(2016) Michael Hoffmann et al.   ADVANCED FUNCTIONAL MATERIALS

Physical Mechanisms behind the Field-Cycling Behavior of HfO2 -Based Ferroelectric Capacitors

(2016) Milan Pešić et al.   ADVANCED FUNCTIONAL MATERIALS

Negative Capacitance in Short-Channel FinFETs Externally Connected to an Epitaxial Ferroelectric Capacitor

(2016) Asif Islam Khan et al.   IEEE ELECTRON DEVICE LETTERS

Negative Capacitance Behavior in a Leaky Ferroelectric

(2016) Asif Islam Khan et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Switching-Speed Limitations of Ferroelectric Negative-Capacitance FETs

(2016) Zhi Cheng Yuan et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Orientation control and domain structure analysis of {100}-oriented epitaxial ferroelectric orthorhombic HfO2-based thin films

(2016) Kiliha Katayama et al.   JOURNAL OF APPLIED PHYSICS

Time-Dependent Negative Capacitance Effects in Al2O3/BaTiO3 Bilayers

(2016) Yu Jin Kim et al.   NANO LETTERS

Negative capacitance in multidomain ferroelectric superlattices

(2016) Pavlo Zubko et al.   NATURE

On device design for steep-slope negative-capacitance field-effect-transistor operating at sub-0.2V supply voltage with ferroelectric HfO2 thin film

(2016) Masaharu Kobayashi et al.   AIP Advances

Structural Changes Underlying Field-Cycling Phenomena in Ferroelectric HfO2Thin Films

(2016) Everett D. Grimley et al.   Advanced Electronic Materials

On the structural origins of ferroelectricity in HfO2 thin films

(2015) Xiahan Sang et al.   APPLIED PHYSICS LETTERS

Negative capacitance detected

(2015) Gustau Catalan et al.   NATURE MATERIALS

Experimental Observation of Negative Capacitance in Ferroelectrics at Room Temperature

(2014) Daniel J. R. Appleby et al.   NANO LETTERS

Room-Temperature Negative Capacitance in a Ferroelectric–Dielectric Superlattice Heterostructure

(2014) Weiwei Gao et al.   NANO LETTERS

Negative capacitance in a ferroelectric capacitor

(2014) Asif Islam Khan et al.   NATURE MATERIALS

Tunnel Field-Effect Transistors: State-of-the-Art

(2014) Hao Lu et al.   IEEE Journal of the Electron Devices Society

Incipient Ferroelectricity in Al-Doped HfO2 Thin Films

(2012) Stefan Mueller et al.   ADVANCED FUNCTIONAL MATERIALS

Ten-Nanometer Ferroelectric $\hbox{Si:HfO}_{2}$ Films for Next-Generation FRAM Capacitors

(2012) Stefan Mueller et al.   IEEE ELECTRON DEVICE LETTERS

Ferroelectricity in Simple Binary ZrO2 and HfO2

(2012) Johannes Müller et al.   NANO LETTERS

Ferroelectricity in Gd-Doped HfO2Thin Films

(2012) S. Mueller et al.   ECS Journal of Solid State Science and Technology

Experimental evidence of ferroelectric negative capacitance in nanoscale heterostructures

(2011) Asif Islam Khan et al.   APPLIED PHYSICS LETTERS

Phase transitions in ferroelectric silicon doped hafnium oxide

(2011) T. S. Böscke et al.   APPLIED PHYSICS LETTERS

Ferroelectricity in hafnium oxide thin films

(2011) T. S. Böscke et al.   APPLIED PHYSICS LETTERS

Ferroelectric Zr0.5Hf0.5O2thin films for nonvolatile memory applications

(2011) J. Müller et al.   APPLIED PHYSICS LETTERS

Ferroelectricity in yttrium-doped hafnium oxide

(2011) J. Müller et al.   JOURNAL OF APPLIED PHYSICS

Ultrathin EOT high-κ/metal gate devices for future technologies: Challenges, achievements and perspectives (invited)

(2011) L.-Å. Ragnarsson et al.   MICROELECTRONIC ENGINEERING

Tunnel field-effect transistors as energy-efficient electronic switches

(2011) Adrian M. Ionescu et al.   NATURE

Multidomain ferroelectricity as a limiting factor for voltage amplification in ferroelectric field-effect transistors

(2010) A. Cano et al.   APPLIED PHYSICS LETTERS

It's Time to Reinvent the Transistor!

(2010) T. N. Theis et al.   SCIENCE

Negative capacitance to the rescue?

(2008) Victor V. Zhirnov et al.   Nature Nanotechnology

Use of Negative Capacitance to Provide Voltage Amplification for Low Power Nanoscale Devices

(2007) Sayeef Salahuddin et al.   NANO LETTERS