Truly Electroforming‐Free Memristor Based on TiO 2 ‐CoO Phase‐Separated Oxides with Extremely High Uniformity and Low Power Consumption

Enhancement of resistive switching performance by introducing a thin non-stoichiometric CeO2-x switching layer in TiO2-based resistive random access memory

(2019) Muhammad Ismail et al.   APPLIED PHYSICS LETTERS

Memristive crossbar arrays for brain-inspired computing

(2019) Qiangfei Xia et al.   NATURE MATERIALS

Temperature-dependent magnetotransport of Co–Ti–O nanocomposite films

(2019) Fuxing Wan et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Highly Uniform Resistive Switching in HfO 2 Films Embedded with Ordered Metal Nanoisland Arrays

(2019) Jiaying Wang et al.   ADVANCED FUNCTIONAL MATERIALS

Forming‐Free Grain Boundary Engineered Hafnium Oxide Resistive Random Access Memory Devices

(2019) Stefan Petzold et al.   Advanced Electronic Materials

Improvement of durability and switching speed by incorporating nanocrystals in the HfOx based resistive random access memory devices

(2018) Quantan Wu et al.   APPLIED PHYSICS LETTERS

SiGe epitaxial memory for neuromorphic computing with reproducible high performance based on engineered dislocations

(2018) Shinhyun Choi et al.   NATURE MATERIALS

Neuro-Inspired Computing With Emerging Nonvolatile Memorys

(2018) Shimeng Yu   PROCEEDINGS OF THE IEEE

Tuning Ionic Transport in Memristive Devices by Graphene with Engineered Nanopores

(2016) Jihang Lee et al.   ACS Nano

Impact of oxygen stoichiometry on electroforming and multiple switching modes in TiN/TaOx/Pt based ReRAM

(2016) S. U. Sharath et al.   APPLIED PHYSICS LETTERS

Memristors with diffusive dynamics as synaptic emulators for neuromorphic computing

(2016) Zhongrui Wang et al.   NATURE MATERIALS

Self-assembled oxide films with tailored nanoscale ionic and electronic channels for controlled resistive switching

(2016) Seungho Cho et al.   Nature Communications

Training and operation of an integrated neuromorphic network based on metal-oxide memristors

(2015) M. Prezioso et al.   NATURE

Nanoscale cation motion in TaOx, HfOx and TiOx memristive systems

(2015) Anja Wedig et al.   Nature Nanotechnology

Oxygen vacancy and hole conduction in amorphous TiO2

(2015) Hieu H. Pham et al.   PHYSICAL CHEMISTRY CHEMICAL PHYSICS

Comprehensive Physical Model of Dynamic Resistive Switching in an Oxide Memristor

(2014) Sungho Kim et al.   ACS Nano

A Review of Three-Dimensional Resistive Switching Cross-Bar Array Memories from the Integration and Materials Property Points of View

(2014) Jun Yeong Seok et al.   ADVANCED FUNCTIONAL MATERIALS

Impact of the Mechanical Stress on Switching Characteristics of Electrochemical Resistive Memory

(2014) Stefano Ambrogio et al.   ADVANCED MATERIALS

Novel Electroforming-Free Nanoscaffold Memristor with Very High Uniformity, Tunability, and Density

(2014) Shinbuhm Lee et al.   ADVANCED MATERIALS

Towards forming-free resistive switching in oxygen engineered HfO2−x

(2014) S. U. Sharath et al.   APPLIED PHYSICS LETTERS

Highly Improved Uniformity in the Resistive Switching Parameters of TiO2Thin Films by Inserting Ru Nanodots

(2013) Jung Ho Yoon et al.   ADVANCED MATERIALS

A Low Energy Oxide-Based Electronic Synaptic Device for Neuromorphic Visual Systems with Tolerance to Device Variation

(2013) Shimeng Yu et al.   ADVANCED MATERIALS

Dopant selection rules for desired electronic structure and vacancy formation characteristics of TiO2 resistive memory

(2013) Liang Zhao et al.   APPLIED PHYSICS LETTERS

Electrical Performance and Scalability of Pt Dispersed SiO2 Nanometallic Resistance Switch

(2013) Byung Joon Choi et al.   NANO LETTERS

In situ observation of filamentary conducting channels in an asymmetric Ta2O5−x/TaO2−x bilayer structure

(2013) Gyeong-Su Park et al.   Nature Communications

Thermophoresis/diffusion as a plausible mechanism for unipolar resistive switching in metal–oxide–metal memristors

(2012) Dmitri B. Strukov et al.   APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part I: Experimental Study

(2012) Federico Nardi et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part II: Modeling

(2012) Stefano Larentis et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Memristive devices for computing

(2012) J. Joshua Yang et al.   Nature Nanotechnology

Origin of the Ultra-nonlinear Switching Kinetics in Oxide-Based Resistive Switches

(2011) Stephan Menzel et al.   ADVANCED FUNCTIONAL MATERIALS

Modeling the Universal Set/Reset Characteristics of Bipolar RRAM by Field- and Temperature-Driven Filament Growth

(2011) Daniele Ielmini   IEEE TRANSACTIONS ON ELECTRON DEVICES

Physical models of size-dependent nanofilament formation and rupture in NiO resistive switching memories

(2011) D Ielmini et al.   NANOTECHNOLOGY

Sub-nanosecond switching of a tantalum oxide memristor

(2011) Antonio C Torrezan et al.   NANOTECHNOLOGY

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

(2011) Myoung-Jae Lee et al.   NATURE MATERIALS

Controllable Growth of Nanoscale Conductive Filaments in Solid-Electrolyte-Based ReRAM by Using a Metal Nanocrystal Covered Bottom Electrode

(2010) Qi Liu et al.   ACS Nano

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

The mechanism of electroforming of metal oxide memristive switches

(2009) J Joshua Yang et al.   NANOTECHNOLOGY

Exponential ionic drift: fast switching and low volatility of thin-film memristors

(2008) Dmitri B. Strukov et al.   APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

The missing memristor found

(2008) Dmitri B. Strukov et al.   NATURE

Memristive switching mechanism for metal/oxide/metal nanodevices

(2008) J. Joshua Yang et al.   Nature Nanotechnology