Thermophoresis/diffusion as a plausible mechanism for unipolar resistive switching in metal–oxide–metal memristors

Intrinsic constrains on thermally-assisted memristive switching

(2011) Dmitri B. Strukov et al.   APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

Computational investigations into the operating window for memristive devices based on homogeneous ionic motion

(2011) Mohammad Noman et al.   APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

Resistance switching memories are memristors

(2011) Leon Chua   APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

Current-controlled negative differential resistance due to Joule heating in TiO2

(2011) A. S. Alexandrov et al.   APPLIED PHYSICS LETTERS

Filament diffusion model for simulating reset and retention processes in RRAM

(2011) S. Larentis et al.   MICROELECTRONIC ENGINEERING

Physical models of size-dependent nanofilament formation and rupture in NiO resistive switching memories

(2011) D Ielmini et al.   NANOTECHNOLOGY

Transition-metal-oxide-based resistance-change memories

(2010) S. F. Karg et al.   IBM JOURNAL OF RESEARCH AND DEVELOPMENT

Coexistence of the bipolar and unipolar resistive-switching modes in NiO cells made by thermal oxidation of Ni layers

(2010) L. Goux et al.   JOURNAL OF APPLIED PHYSICS

Voltage-time dilemma of pure electronic mechanisms in resistive switching memory cells

(2010) Herbert Schroeder et al.   JOURNAL OF APPLIED PHYSICS

Atomic structure of conducting nanofilaments in TiO2 resistive switching memory

(2010) Deok-Hwang Kwon et al.   Nature Nanotechnology

Memory Devices: Energy–Space–Time Tradeoffs

(2010) Victor V. Zhirnov et al.   PROCEEDINGS OF THE IEEE

Control of filament size and reduction of reset current below 10μA in NiO resistance switching memories

(2010) F. Nardi et al.   SOLID-STATE ELECTRONICS

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

Measurements of current-voltage-induced heating in the Al/SrTiO3−xNy/Al memristor during electroformation and resistance switching

(2009) A. Shkabko et al.   APPLIED PHYSICS LETTERS

Electrical transport and thermometry of electroformed titanium dioxide memristive switches

(2009) Julien Borghetti et al.   JOURNAL OF APPLIED PHYSICS

Switching dynamics in titanium dioxide memristive devices

(2009) Matthew D. Pickett et al.   JOURNAL OF APPLIED PHYSICS

Density functional theory based first-principle calculation of Nb-doped anatase TiO2 and its interactions with oxygen vacancies and interstitial oxygen

(2009) Hideyuki Kamisaka et al.   JOURNAL OF CHEMICAL PHYSICS

Hybrid CMOS/Nanoelectronic Circuits: Opportunities and Challenges

(2009) Konstantin K. Likharev   Journal of Nanoelectronics and Optoelectronics

Morphological and electrical changes in TiO2memristive devices induced by electroforming and switching

(2009) Ruth Münstermann et al.   Physica Status Solidi-Rapid Research Letters

Coupled Ionic and Electronic Transport Model of Thin-Film Semiconductor Memristive Behavior

(2009) Dmitri B. Strukov et al.   Small

Random Circuit Breaker Network Model for Unipolar Resistance Switching

(2008) Seung Chul Chae et al.   ADVANCED MATERIALS

Exponential ionic drift: fast switching and low volatility of thin-film memristors

(2008) Dmitri B. Strukov et al.   APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

Resistive switching in transition metal oxides

(2008) Akihito Sawa   Materials Today

The missing memristor found

(2008) Dmitri B. Strukov et al.   NATURE

Threshold switching mechanism by high-field energy gain in the hopping transport of chalcogenide glasses

(2008) Daniele Ielmini   PHYSICAL REVIEW B

Ab initiostudy of the electronic states induced by oxygen vacancies in rutile and anataseTiO2

(2008) G. Mattioli et al.   PHYSICAL REVIEW B