Nanoscale cation motion in TaOx, HfOx and TiOx memristive systems

Highly Controllable and Stable Quantized Conductance and Resistive Switching Mechanism in Single-Crystal TiO2 Resistive Memory on Silicon

(2014) Chengqing Hu et al.   NANO LETTERS

Physical origins and suppression of Ag dissolution in GeSx-based ECM cells

(2014) Jan van den Hurk et al.   PHYSICAL CHEMISTRY CHEMICAL PHYSICS

Impact of the Counter-Electrode Material on Redox Processes in Resistive Switching Memories

(2014) Stefan Tappertzhofen et al.   ChemElectroChem

Multiple Memory States in Resistive Switching Devices Through Controlled Size and Orientation of the Conductive Filament

(2013) S. Balatti et al.   ADVANCED MATERIALS

Scanning tunneling microscopy/spectroscopy studies of resistive switching in Nb-doped SrTiO3

(2012) Y. L. Chen et al.   JOURNAL OF APPLIED PHYSICS

A scalable neuristor built with Mott memristors

(2012) Matthew D. Pickett et al.   NATURE MATERIALS

Atomically controlled electrochemical nucleation at superionic solid electrolyte surfaces

(2012) Ilia Valov et al.   NATURE MATERIALS

Memristive devices for computing

(2012) J. Joshua Yang et al.   Nature Nanotechnology

Effects of Moisture on the Switching Characteristics of Oxide-Based, Gapless-Type Atomic Switches

(2011) Tohru Tsuruoka et al.   ADVANCED FUNCTIONAL MATERIALS

Atomic Switch: Atom/Ion Movement Controlled Devices for Beyond Von-Neumann Computers

(2011) Tsuyoshi Hasegawa et al.   ADVANCED MATERIALS

Switching kinetics of a Cu2S-based gap-type atomic switch

(2011) Alpana Nayak et al.   NANOTECHNOLOGY

Temperature effects on the switching kinetics of a Cu–Ta2O5-based atomic switch

(2011) Tohru Tsuruoka et al.   NANOTECHNOLOGY

Sub-nanosecond switching of a tantalum oxide memristor

(2011) Antonio C Torrezan et al.   NANOTECHNOLOGY

Short-term plasticity and long-term potentiation mimicked in single inorganic synapses

(2011) Takeo Ohno et al.   NATURE MATERIALS

Coexistence of Filamentary and Homogeneous Resistive Switching in Fe-Doped SrTiO3 Thin-Film Memristive Devices

(2010) Ruth Muenstermann et al.   ADVANCED MATERIALS

High switching endurance in TaOx memristive devices

(2010) J. Joshua Yang et al.   APPLIED PHYSICS LETTERS

Rate-Limiting Processes Determining the Switching Time in a Ag2S Atomic Switch

(2010) Alpana Nayak et al.   Journal of Physical Chemistry Letters

Nanoscale Memristor Device as Synapse in Neuromorphic Systems

(2010) Sung Hyun Jo et al.   NANO LETTERS

Forming and switching mechanisms of a cation-migration-based oxide resistive memory

(2010) T Tsuruoka et al.   NANOTECHNOLOGY

Complementary resistive switches for passive nanocrossbar memories

(2010) Eike Linn et al.   NATURE MATERIALS

Impact of Defect Distribution on Resistive Switching Characteristics of Sr2TiO4Thin Films

(2009) Keisuke Shibuya et al.   ADVANCED MATERIALS

Controllable local modification of fractured Nb-doped SrTiO3 surfaces

(2009) TeYu Chien et al.   APPLIED PHYSICS LETTERS