Origin of the Ultra-nonlinear Switching Kinetics in Oxide-Based Resistive Switches
Published 2011 View Full Article
- Home
- Publications
- Publication Search
- Publication Details
Title
Origin of the Ultra-nonlinear Switching Kinetics in Oxide-Based Resistive Switches
Authors
Keywords
-
Journal
ADVANCED FUNCTIONAL MATERIALS
Volume 21, Issue 23, Pages 4487-4492
Publisher
Wiley
Online
2011-09-28
DOI
10.1002/adfm.201101117
References
Ask authors/readers for more resources
Related references
Note: Only part of the references are listed.- Intrinsic constrains on thermally-assisted memristive switching
- (2011) Dmitri B. Strukov et al. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
- Gd-doping effect on performance of HfO2 based resistive switching memory devices using implantation approach
- (2011) Haowei Zhang et al. APPLIED PHYSICS LETTERS
- Coexistence of Filamentary and Homogeneous Resistive Switching in Fe-Doped SrTiO3 Thin-Film Memristive Devices
- (2010) Ruth Muenstermann et al. ADVANCED MATERIALS
- A Phenomenological Model for the Reset Mechanism of Metal Oxide RRAM
- (2010) Shimeng Yu et al. IEEE ELECTRON DEVICE LETTERS
- Resistance switching in HfO2 metal-insulator-metal devices
- (2010) P. Gonon et al. JOURNAL OF APPLIED PHYSICS
- Mechanism for bipolar resistive switching in transition-metal oxides
- (2010) M. J. Rozenberg et al. PHYSICAL REVIEW B
- Modeling for bipolar resistive memory switching in transition-metal oxides
- (2010) Ji Hyun Hur et al. PHYSICAL REVIEW B
- Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges
- (2009) Rainer Waser et al. ADVANCED MATERIALS
- Inhomogeneous chemical states in resistance-switching devices with a planar-type Pt/CuO/Pt structure
- (2009) R. Yasuhara et al. APPLIED PHYSICS LETTERS
- Self-Accelerated Thermal Dissolution Model for Reset Programming in Unipolar Resistive-Switching Memory (RRAM) Devices
- (2009) Ugo Russo et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Separation of bulk and interface contributions to electroforming and resistive switching behavior of epitaxial Fe-doped SrTiO3
- (2009) T. Menke et al. JOURNAL OF APPLIED PHYSICS
- Impact of the electroforming process on the device stability of epitaxial Fe-doped SrTiO3 resistive switching cells
- (2009) T. Menke et al. JOURNAL OF APPLIED PHYSICS
- Switching dynamics in titanium dioxide memristive devices
- (2009) Matthew D. Pickett et al. JOURNAL OF APPLIED PHYSICS
- Exponential ionic drift: fast switching and low volatility of thin-film memristors
- (2008) Dmitri B. Strukov et al. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
- The missing memristor found
- (2008) Dmitri B. Strukov et al. NATURE
- Memristive switching mechanism for metal/oxide/metal nanodevices
- (2008) J. Joshua Yang et al. Nature Nanotechnology
Find the ideal target journal for your manuscript
Explore over 38,000 international journals covering a vast array of academic fields.
SearchCreate your own webinar
Interested in hosting your own webinar? Check the schedule and propose your idea to the Peeref Content Team.
Create Now