AlGaN/GaN High Electron Mobility Transistors on Semi-Insulating Ammono-GaN Substrates with Regrown Ohmic Contacts

Emerging trends in wide band gap semiconductors (SiC and GaN) technology for power devices

(2018) Fabrizio Roccaforte et al.   MICROELECTRONIC ENGINEERING

Basic ammonothermal growth of Gallium Nitride – State of the art, challenges, perspectives

(2018) M. Zajac et al.   PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS

Flexible IGZO Schottky diodes on paper

(2017) Jakub Kaczmarski et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Effect of self-heating on electrical characteristics of AlGaN/ GaN HEMT on Si (111) substrate

(2017) Adarsh Nigam et al.   AIP Advances

Impact of recess etching and surface treatments on ohmic contacts regrown by molecular-beam epitaxy for AlGaN/GaN high electron mobility transistors

(2016) S. Joglekar et al.   APPLIED PHYSICS LETTERS

Effect of Reduced Extended Defect Density in MOCVD Grown AlGaN/GaN HEMTs on Native GaN Substrates

(2016) Travis J. Anderson et al.   IEEE ELECTRON DEVICE LETTERS

Challenges and future perspectives in HVPE-GaN growth on ammonothermal GaN seeds

(2016) M Bockowski et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Dielectric properties of highly resistive GaN crystals grown by ammonothermal method at microwave frequencies

(2016) Jerzy Krupka et al.   AIP Advances

The Impact of Defects on GaN Device Behavior: Modeling Dislocations, Traps, and Pits

(2016) Victor Moroz et al.   ECS Journal of Solid State Science and Technology

Transparent Amorphous Ru–Si–O Schottky Contacts to In–Ga–Zn–O

(2015) Jakub Kaczmarski et al.   Journal of Display Technology

Ion implantation for isolation of AlGaN/GaN HEMTs using C or Al

(2015) Andrzej Taube et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Electrical and structural properties of Ti/Al-based contacts on AlGaN/GaN heterostructures with different quality

(2015) Giuseppe Greco et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Review—Ionizing Radiation Damage Effects on GaN Devices

(2015) S. J. Pearton et al.   ECS Journal of Solid State Science and Technology

Thermal conductivity of bulk GaN—Effects of oxygen, magnesium doping, and strain field compensation

(2014) Roland B. Simon et al.   APPLIED PHYSICS LETTERS

RF Capacitive Spectroscopy for Contactless Measurements of Resistivity Profiles in Highly Resistive Semiconductor Wafers

(2014) Jerzy Krupka et al.   IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING

HVPE-GaN grown on MOCVD-GaN/sapphire template and ammonothermal GaN seeds: Comparison of structural, optical, and electrical properties

(2014) Tomasz Sochacki et al.   JOURNAL OF CRYSTAL GROWTH

AlGaN/GaN HEMT structures on ammono bulk GaN substrate

(2014) P Kruszewski et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Preparation of Free-Standing GaN Substrates from Thick GaN Layers Crystallized by Hydride Vapor Phase Epitaxy on Ammonothermally Grown GaN Seeds

(2013) Tomasz Sochacki et al.   Applied Physics Express

Progress and Prospect of the Growth of Wide-Band-Gap Group III Nitrides: Development of the Growth Method for Single-Crystal Bulk GaN

(2013) Hiroshi Amano   JAPANESE JOURNAL OF APPLIED PHYSICS

Contactless methods of conductivity and sheet resistance measurement for semiconductors, conductors and superconductors

(2013) Jerzy Krupka   MEASUREMENT SCIENCE and TECHNOLOGY

Reliability studies of AlGaN/GaN high electron mobility transistors

(2013) D J Cheney et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Thermal Properties of AlGaN/GaN HFETs on Bulk GaN Substrates

(2012) N. Killat et al.   IEEE ELECTRON DEVICE LETTERS

MBE-Regrown Ohmics in InAlN HEMTs With a Regrowth Interface Resistance of 0.05 $\Omega\cdot\hbox{mm}$

(2012) Jia Guo et al.   IEEE ELECTRON DEVICE LETTERS

A Review of GaN on SiC High Electron-Mobility Power Transistors and MMICs

(2012) Raymond S. Pengelly et al.   IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES

AlGaN/GaN HEMT device reliability and degradation evolution: Importance of diffusion processes

(2010) Martin Kuball et al.   MICROELECTRONICS RELIABILITY

Direct contact mechanism of Ohmic metallization to AlGaN/GaN heterostructures via Ohmic area recess etching

(2009) Liang Wang et al.   APPLIED PHYSICS LETTERS

Formation mechanism of Ohmic contacts on AlGaN∕GaN heterostructure: Electrical and microstructural characterizations

(2008) Liang Wang et al.   JOURNAL OF APPLIED PHYSICS

Excellent crystallinity of truly bulk ammonothermal GaN

(2008) R. Dwiliński et al.   JOURNAL OF CRYSTAL GROWTH