Charge transport in amorphous Hf0.5Zr0.5O2

Origin of traps and charge transport mechanism in hafnia

(2014) D. R. Islamov et al.   APPLIED PHYSICS LETTERS

The origin of 2.7 eV luminescence and 5.2 eV excitation band in hafnium oxide

(2014) T. V. Perevalov et al.   APPLIED PHYSICS LETTERS

Low-Leakage-Current DRAM-Like Memory Using a One-Transistor Ferroelectric MOSFET With a Hf-Based Gate Dielectric

(2014) Chun-Hu Cheng et al.   IEEE ELECTRON DEVICE LETTERS

The origin of 2.7 eV blue luminescence band in zirconium oxide

(2014) T. V. Perevalov et al.   JOURNAL OF APPLIED PHYSICS

Effect of forming gas annealing on the ferroelectric properties of Hf0.5Zr0.5O2 thin films with and without Pt electrodes

(2013) Min Hyuk Park et al.   APPLIED PHYSICS LETTERS

Evolution of phases and ferroelectric properties of thin Hf0.5Zr0.5O2 films according to the thickness and annealing temperature

(2013) Min Hyuk Park et al.   APPLIED PHYSICS LETTERS

Charge transport in HfO2 due to multiphonon traps ionization mechanism in SiO2/HfO2 stacks

(2013) Yu. N. Novikov   JOURNAL OF APPLIED PHYSICS

Ferroelectric Zr0.5Hf0.5O2thin films for nonvolatile memory applications

(2011) J. Müller et al.   APPLIED PHYSICS LETTERS

Charge transport in dielectrics via tunneling between traps

(2011) K. A. Nasyrov et al.   JOURNAL OF APPLIED PHYSICS

Ultimate scaling of TiN/ZrO2/TiN capacitors: Leakage currents and limitations due to electrode roughness

(2011) Gunther Jegert et al.   JOURNAL OF APPLIED PHYSICS

Wigner crystallization due to electrons localized at deep traps in two-dimensional amorphous dielectric

(2010) S. S. Shaimeev et al.   APPLIED PHYSICS LETTERS

A first-principles study of the effects of Hf doping on the dielectric response in ZrO2

(2009) Gargi Dutta   JOURNAL OF APPLIED PHYSICS

QUANTUM ESPRESSO: a modular and open-source software project for quantum simulations of materials

(2009) Paolo Giannozzi et al.   JOURNAL OF PHYSICS-CONDENSED MATTER