Defect states and charge trapping characteristics of HfO2 films for high performance nonvolatile memory applications

Improved performances of metal-oxide-nitride-oxide-silicon memory with HfTiON as charge-trapping layer

(2013) J. X. Chen et al.   APPLIED PHYSICS LETTERS

Improved Memory Characteristics of A Novel TaN/Al2O3/TiO2/HfO2/SiO2/Si Structured Charge Trapping Memory

(2013) Yahua Peng et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

The effect of thermal treatment induced inter-diffusion at the interfaces on the charge trapping performance of HfO2/Al2O3 nanolaminate-based memory devices

(2013) Xuexin Lan et al.   JOURNAL OF APPLIED PHYSICS

Electronic structure of oxygen vacancies in hafnium oxide

(2013) T.V. Perevalov et al.   MICROELECTRONIC ENGINEERING

Effects of high-temperature O2annealing on Al2O3blocking layer and Al2O3/Si3N4interface for MANOS structures

(2012) Zhongguang Xu et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Charge-trapping MOS memory structure using anodic alumina charging medium

(2011) E. Hourdakis et al.   MICROELECTRONIC ENGINEERING

Charge trapping properties of the HfO2 layer with various thicknesses for charge trap flash memory applications

(2010) Hee-Wook You et al.   APPLIED PHYSICS LETTERS

A metal/Al2O3/ZrO2/SiO2/Si (MAZOS) structure for high-performance non-volatile memory application

(2010) Jing Liu et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Nitrided Tetragonal $\hbox{ZrO}_{2}$ as the Charge-Trapping Layer for Nonvolatile Memory Application

(2009) Yung-Hsien Wu et al.   IEEE ELECTRON DEVICE LETTERS

Low Voltage Operation of High-κ HfO2/TiO2/Al2O3Single Quantum Well for Nanoscale Flash Memory Device Applications

(2008) Siddheswar Maikap et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Characterization of HfTaO films for gate oxide and metal-ferroelectric-insulator-silicon device applications

(2008) Xu-bing Lu et al.   JOURNAL OF APPLIED PHYSICS