The effects of layering in ferroelectric Si-doped HfO2 thin films

The effects of crystallographic orientation and strain of thin Hf0.5Zr0.5O2 film on its ferroelectricity

(2014) Min Hyuk Park et al.   APPLIED PHYSICS LETTERS

Ferroelectric properties and switching endurance of Hf0.5Zr0.5O2films on TiN bottom and TiN or RuO2top electrodes

(2014) Min Hyuk Park et al.   Physica Status Solidi-Rapid Research Letters

Effect of forming gas annealing on the ferroelectric properties of Hf0.5Zr0.5O2 thin films with and without Pt electrodes

(2013) Min Hyuk Park et al.   APPLIED PHYSICS LETTERS

Evolution of phases and ferroelectric properties of thin Hf0.5Zr0.5O2 films according to the thickness and annealing temperature

(2013) Min Hyuk Park et al.   APPLIED PHYSICS LETTERS

From MFM Capacitors Toward Ferroelectric Transistors: Endurance and Disturb Characteristics of ${\rm HfO}_{2}$-Based FeFET Devices

(2013) Stefan Mueller et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Hafnium Oxide Based CMOS Compatible Ferroelectric Materials

(2013) U. Schroeder et al.   ECS Journal of Solid State Science and Technology

Nanosecond Polarization Switching and Long Retention in a Novel MFIS-FET Based on Ferroelectric $\hbox{HfO}_{2}$

(2012) Johannes Muller et al.   IEEE ELECTRON DEVICE LETTERS

Reliability Characteristics of Ferroelectric $ \hbox{Si:HfO}_{2}$ Thin Films for Memory Applications

(2012) Stefan Mueller et al.   IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY

Ultimate Scaling of High-κ Gate Dielectrics: Higher-κ or Interfacial Layer Scavenging?

(2012) Takashi Ando   Materials

Ferroelectricity in hafnium oxide thin films

(2011) T. S. Böscke et al.   APPLIED PHYSICS LETTERS

Strong ferroelectric domain-wall pinning in BiFeO3 ceramics

(2010) Tadej Rojac et al.   JOURNAL OF APPLIED PHYSICS