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Title
A Resistive Memory in Semiconducting BiFeO3 Thin-Film Capacitors
Authors
Keywords
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Journal
ADVANCED MATERIALS
Volume 23, Issue 10, Pages 1277-1281
Publisher
Wiley
Online
2011-01-31
DOI
10.1002/adma.201004317
References
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Related references
Note: Only part of the references are listed.- Transition-metal-oxide-based resistance-change memories
- (2010) S. F. Karg et al. IBM JOURNAL OF RESEARCH AND DEVELOPMENT
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- (2010) Lucian Pintilie et al. PHYSICAL REVIEW B
- Understanding the Nature of Ultrafast Polarization Dynamics of Ferroelectric Memory in the Multiferroic BiFeO3
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- Evidences for the depletion region induced by the polarization of ferroelectric semiconductors
- (2009) Guo-Liang Yuan et al. APPLIED PHYSICS LETTERS
- Tunneling Electroresistance Effect in Ferroelectric Tunnel Junctions at the Nanoscale
- (2009) A. Gruverman et al. NANO LETTERS
- Giant tunnel electroresistance for non-destructive readout of ferroelectric states
- (2009) V. Garcia et al. NATURE
- Electric modulation of conduction in multiferroic Ca-doped BiFeO3 films
- (2009) C.-H. Yang et al. NATURE MATERIALS
- Enhancement of ferroelectricity at metal–oxide interfaces
- (2009) Massimiliano Stengel et al. NATURE MATERIALS
- Conduction at domain walls in oxide multiferroics
- (2009) J. Seidel et al. NATURE MATERIALS
- Switchable Ferroelectric Diode and Photovoltaic Effect in BiFeO3
- (2009) T. Choi et al. SCIENCE
- Polarization Control of Electron Tunneling into Ferroelectric Surfaces
- (2009) P. Maksymovych et al. SCIENCE
- Resistive switching in transition metal oxides
- (2008) Akihito Sawa Materials Today
- Memristive switching mechanism for metal/oxide/metal nanodevices
- (2008) J. Joshua Yang et al. Nature Nanotechnology
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