Ferroelectric Negative Capacitance Field Effect Transistor

Time-Resolved Measurement of Negative Capacitance

(2018) Pankaj Sharma et al.   IEEE ELECTRON DEVICE LETTERS

Designing 0.5 V 5-nm HP and 0.23 V 5-nm LP NC-FinFETs With Improved ${I}_{ \mathrm{\scriptscriptstyle OFF}}$ Sensitivity in Presence of Parasitic Capacitance

(2018) Harshit Agarwal et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Physical Origin of Transient Negative Capacitance in a Ferroelectric Capacitor

(2018) Sou-Chi Chang et al.   Physical Review Applied

Polarization switching in ultrathin polyvinylidene fluoride homopolymer ferroelectric films

(2017) E. V. Paramonova et al.   FERROELECTRICS

Impact of Parasitic Capacitance and Ferroelectric Parameters on Negative Capacitance FinFET Characteristics

(2017) Sourabh Khandelwal et al.   IEEE ELECTRON DEVICE LETTERS

Work Function Engineering for Performance Improvement in Leaky Negative Capacitance FETs

(2017) Asif Islam Khan et al.   IEEE ELECTRON DEVICE LETTERS

Design Space Exploration of Hysteresis-Free HfZrOx-Based Negative Capacitance FETs

(2017) Ankit Sharma et al.   IEEE ELECTRON DEVICE LETTERS

Suppressed Fin-LER Induced Variability in Negative Capacitance FinFETs

(2017) Ho-Pei Lee et al.   IEEE ELECTRON DEVICE LETTERS

Current-Voltage Model for Negative Capacitance Field-Effect Transistors

(2017) Hyunjae Lee et al.   IEEE ELECTRON DEVICE LETTERS

Negative Capacitance FinFET With Sub-20-mV/decade Subthreshold Slope and Minimal Hysteresis of 0.48 V

(2017) Eunah Ko et al.   IEEE ELECTRON DEVICE LETTERS

Enabling Energy-Efficient Nonvolatile Computing With Negative Capacitance FET

(2017) Xueqing Li et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Design Space Exploration Considering Back-Gate Biasing Effects for 2D Negative-Capacitance Field-Effect Transistors

(2017) Wei-Xiang You et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Compact Model for Ferroelectric Negative Capacitance Transistor With MFIS Structure

(2017) Girish Pahwa et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Sustained Sub-60 mV/decade Switching via the Negative Capacitance Effect in MoS2 Transistors

(2017) Felicia A. McGuire et al.   NANO LETTERS

Subthreshold swing improvement in MoS2 transistors by the negative-capacitance effect in a ferroelectric Al-doped-HfO2/HfO2 gate dielectric stack

(2017) Amirhasan Nourbakhsh et al.   Nanoscale

Negative capacitance gives a positive boost

(2017) Adrian M. Ionescu   Nature Nanotechnology

Steep-slope hysteresis-free negative capacitance MoS2 transistors

(2017) Mengwei Si et al.   Nature Nanotechnology

Negative Capacitance in BaTiO3/BiFeO3 Bilayer Capacitors

(2016) Ya-Fei Hou et al.   ACS Applied Materials & Interfaces

Downscaling and Charge Transport in Nanostructured Ferroelectric Memory Diodes Fabricated by Solution Micromolding

(2016) Thomas Lenz et al.   ADVANCED FUNCTIONAL MATERIALS

Physical Mechanisms behind the Field-Cycling Behavior of HfO2 -Based Ferroelectric Capacitors

(2016) Milan Pešić et al.   ADVANCED FUNCTIONAL MATERIALS

Mobility Enhancement in Solution-Processed Transparent Conductive Oxide TFTs due to Electron Donation from Traps in High-kGate Dielectrics

(2016) Andre Zeumault et al.   ADVANCED FUNCTIONAL MATERIALS

Sub-60 mV/decade switching in 2D negative capacitance field-effect transistors with integrated ferroelectric polymer

(2016) Felicia A. McGuire et al.   APPLIED PHYSICS LETTERS

Negative Capacitance in Short-Channel FinFETs Externally Connected to an Epitaxial Ferroelectric Capacitor

(2016) Asif Islam Khan et al.   IEEE ELECTRON DEVICE LETTERS

Negative Capacitance Field Effect Transistor With Hysteresis-Free Sub-60-mV/Decade Switching

(2016) Jaesung Jo et al.   IEEE ELECTRON DEVICE LETTERS

Effect of Ferroelectric Damping on Dynamic Characteristics of Negative Capacitance Ferroelectric MOSFET

(2016) Yang Li et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Analysis and Compact Modeling of Negative Capacitance Transistor with High ON-Current and Negative Output Differential Resistance—Part II: Model Validation

(2016) Girish Pahwa et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Effects of the Variation of Ferroelectric Properties on Negative Capacitance FET Characteristics

(2016) Cheng-I Lin et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Switching-Speed Limitations of Ferroelectric Negative-Capacitance FETs

(2016) Zhi Cheng Yuan et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Material and device engineering in fully depleted silicon-on-insulator transistors to realize a steep subthreshold swing using negative capacitance

(2016) Hiroyuki Ota et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Simulation-based study of negative-capacitance double-gate tunnel field-effect transistor with ferroelectric gate stack

(2016) Chien Liu et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Time-Dependent Negative Capacitance Effects in Al2O3/BaTiO3 Bilayers

(2016) Yu Jin Kim et al.   NANO LETTERS

Condition for the negative capacitance effect in metal–ferroelectric–insulator–semiconductor devices

(2016) Alexandru Rusu et al.   NANOTECHNOLOGY

Negative capacitance in multidomain ferroelectric superlattices

(2016) Pavlo Zubko et al.   NATURE

The chips are down for Moore’s law

(2016) M. Mitchell Waldrop   NATURE

An improved model for the surface potential and drain current in negative capacitance field effect transistors

(2016) Y. G. Xiao et al.   RSC Advances

The demonstration of significant ferroelectricity in epitaxial Y-doped HfO2 film

(2016) Takao Shimizu et al.   Scientific Reports

On device design for steep-slope negative-capacitance field-effect-transistor operating at sub-0.2V supply voltage with ferroelectric HfO2 thin film

(2016) Masaharu Kobayashi et al.   AIP Advances

Sub-kT/q Subthreshold-Slope Using Negative Capacitance in Low-Temperature Polycrystalline-Silicon Thin-Film Transistor

(2016) Jae Hyo Park et al.   Scientific Reports

Ultrasensitive and Broadband MoS2Photodetector Driven by Ferroelectrics

(2015) Xudong Wang et al.   ADVANCED MATERIALS

Ferroelectricity and Antiferroelectricity of Doped Thin HfO2-Based Films

(2015) Min Hyuk Park et al.   ADVANCED MATERIALS

An anti-ferroelectric gated Landau transistor to achieve sub-60 mV/dec switching at low voltage and high speed

(2015) Kamal Karda et al.   APPLIED PHYSICS LETTERS

Steep Slope and Near Non-Hysteresis of FETs With Antiferroelectric-Like HfZrO for Low-Power Electronics

(2015) M. H. Lee et al.   IEEE ELECTRON DEVICE LETTERS

Interfacial charge-induced polarization switching in Al2O3/Pb(Zr,Ti)O3 bi-layer

(2015) Yu Jin Kim et al.   JOURNAL OF APPLIED PHYSICS

Negative Capacitance in Organic/Ferroelectric Capacitor to Implement Steep Switching MOS Devices

(2015) Jaesung Jo et al.   NANO LETTERS

Negative capacitance detected

(2015) Gustau Catalan et al.   NATURE MATERIALS

The negative piezoelectric effect of the ferroelectric polymer poly(vinylidene fluoride)

(2015) Ilias Katsouras et al.   NATURE MATERIALS

A review of molecular beam epitaxy of ferroelectric BaTiO3films on Si, Ge and GaAs substrates and their applications

(2015) Lucie Mazet et al.   SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS

Phosphorene: An Unexplored 2D Semiconductor with a High Hole Mobility

(2014) Han Liu et al.   ACS Nano

Transition of the polarization switching from extrinsic to intrinsic in the ultrathin polyvinylidene fluoride homopolymer films

(2014) J. L. Wang et al.   APPLIED PHYSICS LETTERS

Low-Voltage Steep Turn-On pMOSFET Using Ferroelectric High-$\kappa$ Gate Dielectric

(2014) Chun Hu Cheng et al.   IEEE ELECTRON DEVICE LETTERS

Room-Temperature Negative Capacitance in a Ferroelectric–Dielectric Superlattice Heterostructure

(2014) Weiwei Gao et al.   NANO LETTERS

Limits on fundamental limits to computation

(2014) Igor L. Markov   NATURE

Negative capacitance in a ferroelectric capacitor

(2014) Asif Islam Khan et al.   NATURE MATERIALS

Black phosphorus field-effect transistors

(2014) Likai Li et al.   Nature Nanotechnology

High-Performance, Highly Bendable MoS2 Transistors with High-K Dielectrics for Flexible Low-Power Systems

(2013) Hsiao-Yu Chang et al.   ACS Nano

Ultrasensitive photodetectors based on monolayer MoS2

(2013) Oriol Lopez-Sanchez et al.   Nature Nanotechnology

Experimental confirmation of temperature dependent negative capacitance in ferroelectric field effect transistor

(2012) Giovanni A. Salvatore et al.   APPLIED PHYSICS LETTERS

Highly Flexible MoS2 Thin-Film Transistors with Ion Gel Dielectrics

(2012) Jiang Pu et al.   NANO LETTERS

High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals

(2012) Sunkook Kim et al.   Nature Communications

Experimental evidence of ferroelectric negative capacitance in nanoscale heterostructures

(2011) Asif Islam Khan et al.   APPLIED PHYSICS LETTERS

Fifty Years of Moore's Law

(2011) Chris A. Mack   IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING

Temperature dependent negative capacitance behavior of Al/rhodamine-101/n-GaAs Schottky barrier diodes and Rs effects on the C–V and G/ω–V characteristics

(2011) Özkan Vural et al.   JOURNAL OF ALLOYS AND COMPOUNDS

Examination of the Possibility of Negative Capacitance Using Ferroelectric Materials in Solid State Electronic Devices

(2011) C. M. Krowne et al.   NANO LETTERS

Tunnel field-effect transistors as energy-efficient electronic switches

(2011) Adrian M. Ionescu et al.   NATURE

Single-layer MoS2 transistors

(2011) B. Radisavljevic et al.   Nature Nanotechnology

Multidomain ferroelectricity as a limiting factor for voltage amplification in ferroelectric field-effect transistors

(2010) A. Cano et al.   APPLIED PHYSICS LETTERS

High-Performance Poly-Silicon TFTs Using a High-$k$ $\hbox{PrTiO}_{3}$ Gate Dielectric

(2009) Tung-Ming Pan et al.   IEEE ELECTRON DEVICE LETTERS

Ultralow-Voltage Bilayer Graphene Tunnel FET

(2009) G. Fiori et al.   IEEE ELECTRON DEVICE LETTERS

Steep Subthreshold Slope n- and p-Type Tunnel-FET Devices for Low-Power and Energy-Efficient Digital Circuits

(2009) Yasin Khatami et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Review: environmental friendly lead-free piezoelectric materials

(2009) P. K. Panda   JOURNAL OF MATERIALS SCIENCE

Analytical Modeling of the Suspended-Gate FET and Design Insights for Low-Power Logic

(2008) Kerem Akarvardar et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

The Quantum Limit to Moore's Law

(2008) James R. Powell   PROCEEDINGS OF THE IEEE

Punch-through impact ionization MOSFET (PIMOS): From device principle to applications

(2008) K.E. Moselund et al.   SOLID-STATE ELECTRONICS

Use of Negative Capacitance to Provide Voltage Amplification for Low Power Nanoscale Devices

(2007) Sayeef Salahuddin et al.   NANO LETTERS