Design Space Exploration Considering Back-Gate Biasing Effects for 2D Negative-Capacitance Field-Effect Transistors

Published 2017 View Full Article

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Title
Design Space Exploration Considering Back-Gate Biasing Effects for 2D Negative-Capacitance Field-Effect Transistors
Authors
Keywords
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Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 64, Issue 8, Pages 3476-3481
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2017-06-24
DOI
10.1109/ted.2017.2714687

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