Interfacial charge-induced polarization switching in Al2O3/Pb(Zr,Ti)O3 bi-layer

Negative capacitance detected

(2015) Gustau Catalan et al.   NATURE MATERIALS

Prospective of Semiconductor Memory Devices: from Memory System to Materials

(2015) Cheol Seong Hwang   Advanced Electronic Materials

Multiferroic Operation of Dynamic Memory Based on Heterostructured Cantilevers

(2014) Tiberiu-Dan Onuta et al.   ADVANCED MATERIALS

Experimental Observation of Negative Capacitance in Ferroelectrics at Room Temperature

(2014) Daniel J. R. Appleby et al.   NANO LETTERS

Room-Temperature Negative Capacitance in a Ferroelectric–Dielectric Superlattice Heterostructure

(2014) Weiwei Gao et al.   NANO LETTERS

Negative capacitance in a ferroelectric capacitor

(2014) Asif Islam Khan et al.   NATURE MATERIALS

Interface Charge Trap Density of Solution Processed Ferroelectric Gate Thin Film Transistor Using ITO/PZT/Pt Structure

(2013) Pham Van Thanh et al.   FERROELECTRICS LETTERS SECTION

Enhanced tunnelling electroresistance effect due to a ferroelectrically induced phase transition at a magnetic complex oxide interface

(2013) Y. W. Yin et al.   NATURE MATERIALS

Beyond the barrier

(2013) E. Y. Tsymbal et al.   NATURE MATERIALS

Ferroelectric-field-effect-enhanced electroresistance in metal/ferroelectric/semiconductor tunnel junctions

(2013) Zheng Wen et al.   NATURE MATERIALS

Spin-polarized Wide Electron Slabs in Functionally Graded Polar Oxide Heterostructures

(2012) Jiandong Ye et al.   Scientific Reports

Tristate Memory Using Ferroelectric-Insulator-Semiconductor Heterojunctions for 50% Increased Data Storage

(2011) Min Hyuk Park et al.   ADVANCED FUNCTIONAL MATERIALS

Experimental evidence of ferroelectric negative capacitance in nanoscale heterostructures

(2011) Asif Islam Khan et al.   APPLIED PHYSICS LETTERS

Examination of the Possibility of Negative Capacitance Using Ferroelectric Materials in Solid State Electronic Devices

(2011) C. M. Krowne et al.   NANO LETTERS

Ferroelectric Field Effect Transistors for Memory Applications

(2010) Jason Hoffman et al.   ADVANCED MATERIALS

Multidomain ferroelectricity as a limiting factor for voltage amplification in ferroelectric field-effect transistors

(2010) A. Cano et al.   APPLIED PHYSICS LETTERS

The Inlaid Al2O3Tunnel Switch for Ultrathin Ferroelectric Films

(2009) An Quan Jiang et al.   ADVANCED MATERIALS

Negative capacitance to the rescue?

(2008) Victor V. Zhirnov et al.   Nature Nanotechnology

Use of Negative Capacitance to Provide Voltage Amplification for Low Power Nanoscale Devices

(2007) Sayeef Salahuddin et al.   NANO LETTERS