Material and device engineering in fully depleted silicon-on-insulator transistors to realize a steep subthreshold swing using negative capacitance

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Title
Material and device engineering in fully depleted silicon-on-insulator transistors to realize a steep subthreshold swing using negative capacitance
Authors
Keywords
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Journal
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 55, Issue 8S2, Pages 08PD01
Publisher
Japan Society of Applied Physics
Online
2016-04-27
DOI
10.7567/jjap.55.08pd01

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