An anti-ferroelectric gated Landau transistor to achieve sub-60 mV/dec switching at low voltage and high speed

Proposal of a Hysteresis-Free Zero Subthreshold Swing Field-Effect Transistor

(2014) Ankit Jain et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Stability Constraints Define the Minimum Subthreshold Swing of a Negative Capacitance Field-Effect Transistor

(2014) Ankit Jain et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Experimental Observation of Negative Capacitance in Ferroelectrics at Room Temperature

(2014) Daniel J. R. Appleby et al.   NANO LETTERS

Room-Temperature Negative Capacitance in a Ferroelectric–Dielectric Superlattice Heterostructure

(2014) Weiwei Gao et al.   NANO LETTERS

Effective Nanometer Airgap of NEMS Devices Using Negative Capacitance of Ferroelectric Materials

(2014) Muhammad Masuduzzaman et al.   NANO LETTERS

Three-Terminal Nanoelectromechanical Field Effect Transistor with Abrupt Subthreshold Slope

(2014) Ji-Hun Kim et al.   NANO LETTERS

Experimental confirmation of temperature dependent negative capacitance in ferroelectric field effect transistor

(2012) Giovanni A. Salvatore et al.   APPLIED PHYSICS LETTERS

Experimental evidence of ferroelectric negative capacitance in nanoscale heterostructures

(2011) Asif Islam Khan et al.   APPLIED PHYSICS LETTERS

Ferroelectricity in hafnium oxide thin films

(2011) T. S. Böscke et al.   APPLIED PHYSICS LETTERS

Tunnel field-effect transistors as energy-efficient electronic switches

(2011) Adrian M. Ionescu et al.   NATURE

Multidomain ferroelectricity as a limiting factor for voltage amplification in ferroelectric field-effect transistors

(2010) A. Cano et al.   APPLIED PHYSICS LETTERS

In Quest of the “Next Switch”: Prospects for Greatly Reduced Power Dissipation in a Successor to the Silicon Field-Effect Transistor

(2010) Thomas N. Theis et al.   PROCEEDINGS OF THE IEEE

Low-Voltage Tunnel Transistors for Beyond CMOS Logic

(2010) Alan C. Seabaugh et al.   PROCEEDINGS OF THE IEEE

A Double-Spacer I-MOS Transistor With Shallow Source Junction and Lightly Doped Drain for Reduced Operating Voltage and Enhanced Device Performance

(2008) Eng-Huat Toh et al.   IEEE ELECTRON DEVICE LETTERS

Negative capacitance to the rescue?

(2008) Victor V. Zhirnov et al.   Nature Nanotechnology

Use of Negative Capacitance to Provide Voltage Amplification for Low Power Nanoscale Devices

(2007) Sayeef Salahuddin et al.   NANO LETTERS