Subthreshold swing improvement in MoS2 transistors by the negative-capacitance effect in a ferroelectric Al-doped-HfO2/HfO2 gate dielectric stack
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Title
Subthreshold swing improvement in MoS2 transistors by the negative-capacitance effect in a ferroelectric Al-doped-HfO2/HfO2 gate dielectric stack
Authors
Keywords
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Journal
Nanoscale
Volume 9, Issue 18, Pages 6122-6127
Publisher
Royal Society of Chemistry (RSC)
Online
2017-04-20
DOI
10.1039/c7nr00088j
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Related references
Note: Only part of the references are listed.- Direct Observation of Negative Capacitance in Polycrystalline Ferroelectric HfO2
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- Trap Assisted Tunneling and Its Effect on Subthreshold Swing of Tunnel FETs
- (2016) Redwan N. Sajjad et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
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- 2D Semiconductor FETs—Projections and Design for Sub-10 nm VLSI
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- (2015) Xiaolong Chen et al. Nature Communications
- Negative capacitance in a ferroelectric capacitor
- (2014) Asif Islam Khan et al. NATURE MATERIALS
- Electrically Driven Tuning of the Dielectric Constant in MoS2 Layers
- (2013) Elton J. G. Santos et al. ACS Nano
- Incipient Ferroelectricity in Al-Doped HfO2 Thin Films
- (2012) Stefan Mueller et al. ADVANCED FUNCTIONAL MATERIALS
- Ferroelectricity in Simple Binary ZrO2 and HfO2
- (2012) Johannes Müller et al. NANO LETTERS
- Experimental evidence of ferroelectric negative capacitance in nanoscale heterostructures
- (2011) Asif Islam Khan et al. APPLIED PHYSICS LETTERS
- How Good Can Monolayer MoS2Transistors Be?
- (2011) Youngki Yoon et al. NANO LETTERS
- Single-layer MoS2 transistors
- (2011) B. Radisavljevic et al. Nature Nanotechnology
- Use of Negative Capacitance to Provide Voltage Amplification for Low Power Nanoscale Devices
- (2007) Sayeef Salahuddin et al. NANO LETTERS
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