Simulation-based study of negative-capacitance double-gate tunnel field-effect transistor with ferroelectric gate stack

Published 2016 View Full Article

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Title
Simulation-based study of negative-capacitance double-gate tunnel field-effect transistor with ferroelectric gate stack
Authors
Keywords
-
Journal
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 55, Issue 4S, Pages 04EB08
Publisher
Japan Society of Applied Physics
Online
2016-03-18
DOI
10.7567/jjap.55.04eb08

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