Steep Subthreshold Slope n- and p-Type Tunnel-FET Devices for Low-Power and Energy-Efficient Digital Circuits

Authors

Keywords

Journal

Volume 56, Issue 11, Pages 2752-2761

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Online

2009-10-14

DOI

10.1109/ted.2009.2030831

Explore over 38,000 international journals covering a vast array of academic fields.

Interested in hosting your own webinar? Check the schedule and propose your idea to the Peeref Content Team.

Create Now