Evidence of Filamentary Switching in Oxide-based Memory Devices via Weak Programming and Retention Failure Analysis
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Title
Evidence of Filamentary Switching in Oxide-based Memory Devices via Weak Programming and Retention Failure Analysis
Authors
Keywords
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Journal
Scientific Reports
Volume 5, Issue 1, Pages -
Publisher
Springer Nature
Online
2015-09-01
DOI
10.1038/srep13599
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