Effects of Electrodes on the Switching Behavior of Strontium Titanate Nickelate Resistive Random Access Memory

Resistive Switching Behavior in Gelatin Thin Films for Nonvolatile Memory Application

(2014) Yu-Chi Chang et al.   ACS Applied Materials & Interfaces

Influence of substrates on resistive switching behaviors of V-doped SrTiO3thin films

(2014) Zhenhua Tang et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Resistive Switching Properties of Sol–Gel-Derived V-Doped SrTiO3 Thin Films

(2013) Zhen Hua Tang et al.   JOURNAL OF ELECTRONIC MATERIALS

Aluminum Electrode Modulated Bipolar Resistive Switching of Al/Fuel-Assisted NiOx/ITO Memory Devices Modeled with a Dual-Oxygen-Reservoir Structure

(2012) Kun-Keng Chiang et al.   ACS Applied Materials & Interfaces

The mechanism of the asymmetric SET and RESET speed of graphene oxide based flexible resistive switching memories

(2012) Lu-Hao Wang et al.   APPLIED PHYSICS LETTERS

Dynamic Processes of Resistive Switching in Metallic Filament-Based Organic Memory Devices

(2012) Shuang Gao et al.   Journal of Physical Chemistry C

Fabrication and mechanism of high performance bipolar resistive switching device based on SrTiO3/NiO stacked heterostructure

(2012) Yongdan Zhu et al.   MICROELECTRONIC ENGINEERING

Metal–Oxide RRAM

(2012) H.-S. Philip Wong et al.   PROCEEDINGS OF THE IEEE

Mechanism of nonvolatile resistive switching in graphene oxide thin films

(2011) Fei Zhuge et al.   CARBON

Effects of the electroforming polarity on bipolar resistive switching characteristics of SrTiO3−δ films

(2010) X. B. Yan et al.   APPLIED PHYSICS LETTERS

Nonvolatile resistive switching memory based on amorphous carbon

(2010) F. Zhuge et al.   APPLIED PHYSICS LETTERS

Coexistence of the bipolar and unipolar resistive-switching modes in NiO cells made by thermal oxidation of Ni layers

(2010) L. Goux et al.   JOURNAL OF APPLIED PHYSICS

Bipolar resistive switching behavior in Ti/MnO2/Pt structure for nonvolatile memory devices

(2009) Min Kyu Yang et al.   APPLIED PHYSICS LETTERS

Fully Room-Temperature-Fabricated Nonvolatile Resistive Memory for Ultrafast and High-Density Memory Application

(2009) Yu Chao Yang et al.   NANO LETTERS