Improved Resistance Switching Characteristics in Ti-Doped $\hbox{Yb}_{2}\hbox{O}_{3}$ for Resistive Nonvolatile Memory Devices

Investigating the improvement of resistive switching trends after post-forming negative bias stress treatment

(2011) Hsueh-Chih Tseng et al.   APPLIED PHYSICS LETTERS

Effect of postdeposition annealing on the structural and electrical characteristics of Yb2TiO5 charge trapping layers

(2010) Tung-Ming Pan et al.   APPLIED PHYSICS LETTERS

Atomic-Layer-Deposited HfLaO-Based Resistive Switching Memories With Superior Performance

(2010) Lin Chen et al.   IEEE ELECTRON DEVICE LETTERS

Improved Stress Reliability of Analog Metal–Insulator–Metal Capacitors Using $\hbox{TiO}_{2}/\hbox{ZrO}_{2}$ Dielectrics

(2009) S.H. Lin et al.   IEEE ELECTRON DEVICE LETTERS

Resistive Switching in $\hbox{CeO}_{x}$ Films for Nonvolatile Memory Application

(2009) Xiao Sun et al.   IEEE ELECTRON DEVICE LETTERS

Resistive-Switching Characteristics of $\hbox{Al}/ \hbox{Pr}_{0.7}\hbox{Ca}_{0.3}\hbox{MnO}_{3}$ for Nonvolatile Memory Applications

(2009) Dong-Jun Seong et al.   IEEE ELECTRON DEVICE LETTERS

Low-Power and Nanosecond Switching in Robust Hafnium Oxide Resistive Memory With a Thin Ti Cap

(2009) H.Y. Lee et al.   IEEE ELECTRON DEVICE LETTERS

Structure Effects on Resistive Switching of $ \hbox{Al/TiO}_{x}/\hbox{Al}$ Devices for RRAM Applications

(2008) Lee-Eun Yu et al.   IEEE ELECTRON DEVICE LETTERS