Electrical properties of GaN-based metal–insulator–semiconductor structures with Al2O3deposited by atomic layer deposition using water and ozone as the oxygen precursors

High Drain Current Density E-Mode ${\rm Al}_{2}{\rm O}_{3}$/AlGaN/GaN MOS-HEMT on Si With Enhanced Power Device Figure-of-Merit $(4\times 10^{8}~{\rm V}^{2}\Omega^{-1}{\rm cm}^{-2})$

(2013) Joseph Jesudass Freedsman et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Suppression of Gate Leakage and Enhancement of Breakdown Voltage Using Thermally Oxidized Al Layer as Gate Dielectric for AlGaN/GaN Metal–Oxide–Semiconductor High-Electron-Mobility Transistors

(2013) Joseph J. Freedsman et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Capacitance–Voltage Characteristics of Al2O3/AlGaN/GaN Structures and State Density Distribution at Al2O3/AlGaN Interface

(2013) Chihoko Mizue et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Gallium nitride MIS-HEMT using atomic layer deposited Al2O3 as gate dielectric

(2012) Richard Lossy et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

Effect of AlN growth temperature on trap densities of in-situ metal-organic chemical vapor deposition grown AlN/AlGaN/GaN metal-insulator-semiconductor heterostructure field-effect transistors

(2012) Joseph J. Freedsman et al.   AIP Advances

Trap characterization of in-situ metal-organic chemical vapor deposition grown AlN/AlGaN/GaN metal-insulator-semiconductor heterostructures by frequency dependent conductance technique

(2011) Joseph J. Freedsman et al.   APPLIED PHYSICS LETTERS

Comparative study of AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors with Al2O3 and HfO2 gate oxide

(2011) Eiji Miyazaki et al.   SOLID-STATE ELECTRONICS

Metal-organic chemical vapor deposition of quasi-normally-off AlGaN/GaN field-effect transistors on silicon substrates using low-temperature grown AlN cap layers

(2010) S. Tan et al.   APPLIED PHYSICS LETTERS

Enhancement-Mode GaN MIS-HEMTs With n-GaN/i-AlN/n-GaN Triple Cap Layer and High- $k$ Gate Dielectrics

(2010) M. Kanamura et al.   IEEE ELECTRON DEVICE LETTERS

Investigation of the interface between silicon nitride passivations and AlGaN/AlN/GaN heterostructures by C(V) characterization of metal-insulator-semiconductor-heterostructure capacitors

(2010) M. Fagerlind et al.   JOURNAL OF APPLIED PHYSICS

Over 100A operation normally-off AlGaN/GaN hybrid MOS-HFET on Si substrate with high-breakdown voltage

(2010) Hiroshi Kambayashi et al.   SOLID-STATE ELECTRONICS

Influence of Ammonia in the Deposition Process of SiN on the Performance of SiN/AlGaN/GaN Metal–Insulator–Semiconductor High-Electron-Mobility Transistors on 4-in. Si(111)

(2009) Subramaniam Arulkumaran et al.   Applied Physics Express

A comparative study of effects of SiNx deposition method on AlGaN/GaN heterostructure field-effect transistors

(2009) Masataka Higashiwaki et al.   APPLIED PHYSICS LETTERS

High Microwave-Noise Performance of AlGaN/GaN MISHEMTs on Silicon With $\hbox{Al}_{2}\hbox{O}_{3}$ Gate Insulator Grown by ALD

(2009) Zhi Hong Liu et al.   IEEE ELECTRON DEVICE LETTERS

AlGaN/GaN Recessed MIS-Gate HFET With High-Threshold-Voltage Normally-Off Operation for Power Electronics Applications

(2008) Tohru Oka et al.   IEEE ELECTRON DEVICE LETTERS

AlGaN/GaN MOS-HEMT With $\hbox{HfO}_{2}$ Dielectric and $\hbox{Al}_{2}\hbox{O}_{3}$ Interfacial Passivation Layer Grown by Atomic Layer Deposition

(2008) Yuanzheng Yue et al.   IEEE ELECTRON DEVICE LETTERS

Al2O3 Atomic Layer Deposition with Trimethylaluminum and Ozone Studied by in Situ Transmission FTIR Spectroscopy and Quadrupole Mass Spectrometry

(2008) David N. Goldstein et al.   Journal of Physical Chemistry C