Over 100A operation normally-off AlGaN/GaN hybrid MOS-HFET on Si substrate with high-breakdown voltage

Published 2010 View Full Article

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Title
Over 100A operation normally-off AlGaN/GaN hybrid MOS-HFET on Si substrate with high-breakdown voltage
Authors
Keywords
-
Journal
SOLID-STATE ELECTRONICS
Volume 54, Issue 6, Pages 660-664
Publisher
Elsevier BV
Online
2010-01-27
DOI
10.1016/j.sse.2010.01.001

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