High Drain Current Density E-Mode ${\rm Al}_{2}{\rm O}_{3}$/AlGaN/GaN MOS-HEMT on Si With Enhanced Power Device Figure-of-Merit $(4\times 10^{8}~{\rm V}^{2}\Omega^{-1}{\rm cm}^{-2})$

Uniform Growth of AlGaN/GaN High Electron Mobility Transistors on 200 mm Silicon (111) Substrate

(2013) Dennis Christy et al.   Applied Physics Express

Analyses of hetero-interface trapping properties in AlGaN/GaN high electron mobility transistor heterostructures grown on silicon with thick buffer layers

(2012) Joseph J. Freedsman et al.   APPLIED PHYSICS LETTERS

1.4-kV Breakdown Voltage for AlGaN/GaN High-Electron-Mobility Transistors on Silicon Substrate

(2012) Susai Lawrence Selvaraj et al.   IEEE ELECTRON DEVICE LETTERS

Atomic Layer Deposition of $\hbox{SiO}_{2}$ for AlGaN/GaN MOS-HFETs

(2012) Casey J. Kirkpatrick et al.   IEEE ELECTRON DEVICE LETTERS

Effects of TMAH Treatment on Device Performance of Normally Off $\hbox{Al}_{2}\hbox{O}_{3}/\hbox{GaN}$ MOSFET

(2011) Ki-Won Kim et al.   IEEE ELECTRON DEVICE LETTERS

High-Performance Integrated Dual-Gate AlGaN/GaN Enhancement-Mode Transistor

(2010) Bin Lu et al.   IEEE ELECTRON DEVICE LETTERS

Enhancement-Mode GaN MIS-HEMTs With n-GaN/i-AlN/n-GaN Triple Cap Layer and High- $k$ Gate Dielectrics

(2010) M. Kanamura et al.   IEEE ELECTRON DEVICE LETTERS

Low On-Resistance High-Breakdown Normally Off AlN/GaN/AlGaN DHFET on Si Substrate

(2010) F. Medjdoub et al.   IEEE ELECTRON DEVICE LETTERS

Fabrication of normally-off mode GaN and AlGaN/GaN MOSFETs with HfO2 gate insulator

(2009) S. Sugiura et al.   SOLID-STATE ELECTRONICS

AlGaN/GaN Recessed MIS-Gate HFET With High-Threshold-Voltage Normally-Off Operation for Power Electronics Applications

(2008) Tohru Oka et al.   IEEE ELECTRON DEVICE LETTERS

Effect of Gate Leakage in the Subthreshold Characteristics of AlGaN/GaN HEMTs

(2008) J.W. Chung et al.   IEEE ELECTRON DEVICE LETTERS