Investigation of the interface between silicon nitride passivations and AlGaN/AlN/GaN heterostructures by C(V) characterization of metal-insulator-semiconductor-heterostructure capacitors

Published 2010 View Full Article

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Journal

JOURNAL OF APPLIED PHYSICS

Volume 108, Issue 1, Pages 014508

Publisher

AIP Publishing

Online

2010-07-14

DOI

10.1063/1.3428442

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