Optical characteristics of H2O-based and O3-based HfO2 films deposited by ALD using spectroscopy ellipsometry

Electronic Structure and Optical Quality of Nanocrystalline Y2O3 Film Surfaces and Interfaces on Silicon

(2014) E. J. Rubio et al.   Journal of Physical Chemistry C

Identification of optimal ALD process conditions of Nd2O3 on Si by spectroscopic ellipsometry

(2013) Xiaojiao Fan et al.   APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

Physical and dispersive optical characteristics of ZrON/Si thin-film system

(2013) Yew Hoong Wong et al.   APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

Band offset determination of atomic-layer-deposited Al2O3 and HfO2 on InP by internal photoemission and spectroscopic ellipsometry

(2013) K. Xu et al.   JOURNAL OF APPLIED PHYSICS

Thickness-dependence of optical constants for Ta2O5 ultrathin films

(2012) Dong-Xu Zhang et al.   APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

Highly transparent ITO thin films on photosensitive glass: sol–gel synthesis, structure, morphology and optical properties

(2012) László Kőrösi et al.   APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

Influence of different oxidants on the band alignment of HfO2films deposited by atomic layer deposition

(2012) Ji-Bin Fan et al.   Chinese Physics B

Optical and structural characterization of thermal oxidation effects of erbium thin films deposited by electron beam on silicon

(2012) Himani S. Kamineni et al.   JOURNAL OF APPLIED PHYSICS

Identification of electrically active defects in thin dielectric films by spectroscopic ellipsometry

(2012) J. Price et al.   JOURNAL OF APPLIED PHYSICS

Physical properties and electrical characteristics of H2O-based and O3-based HfO2 films deposited by ALD

(2012) Jibin Fan et al.   MICROELECTRONICS RELIABILITY

Charging phenomena in dielectric/semiconductor heterostructures during x-ray photoelectron spectroscopy measurements

(2011) M. Perego et al.   JOURNAL OF APPLIED PHYSICS

Comparison of methods to determine bandgaps of ultrathin HfO2 films using spectroscopic ellipsometry

(2011) Ming Di et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

Spectroscopic ellipsometry and x-ray photoelectron spectroscopy of La2O3 thin films deposited by reactive magnetron sputtering

(2011) V. V. Atuchin et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

Valence-band offset of p-NiO/n-ZnO heterojunction measured by X-ray photoelectron spectroscopy

(2011) Zhi-Guo Yang et al.   PHYSICS LETTERS A

Complete band offset characterization of the HfO2/SiO2/Si stack using charge corrected x-ray photoelectron spectroscopy

(2010) E. Bersch et al.   JOURNAL OF APPLIED PHYSICS

Measurement of w-InN/h-BN Heterojunction Band Offsets by X-Ray Photoemission Spectroscopy

(2010) J. M. Liu et al.   Nanoscale Research Letters

Thickness-modulated optical dielectric constants and band alignments of HfOxNy gate dielectrics

(2009) G. He et al.   JOURNAL OF APPLIED PHYSICS

Spectroscopic ellipsometry and polarimetry for materials and systems analysis at the nanometer scale: state-of-the-art, potential, and perspectives

(2009) Maria Losurdo et al.   JOURNAL OF NANOPARTICLE RESEARCH

Identification of interfacial defects in high-k gate stack films by spectroscopic ellipsometry

(2009) J. Price et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B

Optical properties of MOCVD HfO2films

(2009) Boris Ayupov et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Effects of nitrogen atom doping on optical properties and dielectric constant of HfO2 gate oxides

(2008) X. J. Wang et al.   APPLIED PHYSICS LETTERS

The relationship between local order, long range order, and sub-band-gap defects in hafnium oxide and hafnium silicate films

(2008) D. H. Hill et al.   JOURNAL OF APPLIED PHYSICS

Observation of interfacial electrostatic field-induced changes in the silicon dielectric function using spectroscopic ellipsometry

(2008) J. Price et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE