Band offset determination of atomic-layer-deposited Al2O3 and HfO2 on InP by internal photoemission and spectroscopic ellipsometry

Surface and Interfacial Reaction Study of Half Cycle Atomic Layer Deposited Al$_{2}$O$_{3}$ on Chemically Treated InP Surfaces

(2011) Barry Brennan et al.   Applied Physics Express

Impact of SF6 plasma treatment on performance of TaN–HfO2–InP metal-oxide-semiconductor field-effect transistor

(2011) Yanzhen Wang et al.   APPLIED PHYSICS LETTERS

"Zero" Drain-Current Drift of Inversion-Mode NMOSFET on InP(111)A Surface

(2011) C. Wang et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

Band offsets of Al2O3/InxGa1−xAs (x=0.53 and 0.75) and the effects of postdeposition annealing

(2010) N. V. Nguyen et al.   APPLIED PHYSICS LETTERS

Electron band alignment between (100)InP and atomic-layer deposited Al2O3

(2010) Hsing-Yi Chou et al.   APPLIED PHYSICS LETTERS

Band alignment of metal-oxide-semiconductor structure by internal photoemission spectroscopy and spectroscopic ellipsometry

(2010) N.V. Nguyen et al.   THIN SOLID FILMS

Inversion-Type InP MOSFETs with EOT of 21 Å Using Atomic Layer Deposited Al[sub 2]O[sub 3] Gate Dielectric

(2008) Han Zhao et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

The relationship between local order, long range order, and sub-band-gap defects in hafnium oxide and hafnium silicate films

(2008) D. H. Hill et al.   JOURNAL OF APPLIED PHYSICS