An overview of the switching parameter variation of RRAM

Effects of grain size on phase transition behavior of nanocrystalline shape memory alloys

(2014) QingPing Sun et al.   Science China-Technological Sciences

A Review on Resistive Switching in High-k Dielectrics: A Nanoscale Point of View Using Conductive Atomic Force Microscope

(2014) Mario Lanza   Materials

Highly Improved Uniformity in the Resistive Switching Parameters of TiO2Thin Films by Inserting Ru Nanodots

(2013) Jung Ho Yoon et al.   ADVANCED MATERIALS

Polymer-Based Resistive Memory Materials and Devices

(2013) Wen-Peng Lin et al.   ADVANCED MATERIALS

Influence of molybdenum doping on the switching characteristic in silicon oxide-based resistive switching memory

(2013) Yu-Ting Chen et al.   APPLIED PHYSICS LETTERS

Performance and characteristics of double layer porous silicon oxide resistance random access memory

(2013) Tsung-Ming Tsai et al.   APPLIED PHYSICS LETTERS

Quantum-size effects in hafnium-oxide resistive switching

(2013) Shibing Long et al.   APPLIED PHYSICS LETTERS

Low power W:AlOx/WOx bilayer resistive switching structure based on conductive filament formation and rupture mechanism

(2013) Yue Bai et al.   APPLIED PHYSICS LETTERS

Atomic-level quantized reaction of HfOx memristor

(2013) Yong-En Syu et al.   APPLIED PHYSICS LETTERS

Resistance switching in oxides with inhomogeneous conductivity

(2013) Da-Shan Shang et al.   Chinese Physics B

A Model for the Set Statistics of RRAM Inspired in the Percolation Model of Oxide Breakdown

(2013) Shibing Long et al.   IEEE ELECTRON DEVICE LETTERS

Cycle-to-Cycle Intrinsic RESET Statistics in ${\rm HfO}_{2}$-Based Unipolar RRAM Devices

(2013) Shibing Long et al.   IEEE ELECTRON DEVICE LETTERS

Charge Quantity Influence on Resistance Switching Characteristic During Forming Process

(2013) Tian-Jian Chu et al.   IEEE ELECTRON DEVICE LETTERS

Statistical Model and Rapid Prediction of RRAM SET Speed–Disturb Dilemma

(2013) Wun-Cheng Luo et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Joule's law for organic transistors exploration: Case of contact resistance

(2013) Yong Xu et al.   JOURNAL OF APPLIED PHYSICS

Investigation on the RESET switching mechanism of bipolar Cu/HfO2/Pt RRAM devices with a statistical methodology

(2013) Xiaoyi Yang et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Recent development of studies on the mechanism of resistive memories in several metal oxides

(2013) XueZeng Tian et al.   Science China-Physics Mechanics & Astronomy

Development of silicon photonic devices for optical interconnects

(2013) Xi Xiao et al.   Science China-Technological Sciences

On ferroelectric domain polarization switching mechanism subject to an external electric field by simulations with the phase-field method

(2013) GuangZhao Zhou et al.   Science China-Technological Sciences

Single event upset sensitivity of 45 nm FDSOI and SOI FinFET SRAM

(2013) Du Tang et al.   Science China-Technological Sciences

Growth, dielectric properties, and memory device applications of ZrO2 thin films

(2013) Debashis Panda et al.   THIN SOLID FILMS

TaOx-based resistive switching memories: prospective and challenges

(2013) Amit Prakash et al.   Nanoscale Research Letters

Resistive Switching and Magnetic Modulation in Cobalt-Doped ZnO

(2012) Guang Chen et al.   ADVANCED MATERIALS

Improved current distribution in resistive memory on flexible substrate using nitrogen-rich TaN electrode

(2012) Zhi-Wei Zheng et al.   APPLIED PHYSICS LETTERS

Ti-electrode effects of NiO based resistive switching memory with Ni insertion layer

(2012) Seung Wook Ryu et al.   APPLIED PHYSICS LETTERS

Improved switching uniformity in resistive random access memory containing metal-doped electrolyte due to thermally agglomerated metallic filaments

(2012) Wootae Lee et al.   APPLIED PHYSICS LETTERS

Grain boundaries as preferential sites for resistive switching in the HfO2 resistive random access memory structures

(2012) M. Lanza et al.   APPLIED PHYSICS LETTERS

Resistive switching in hafnium dioxide layers: Local phenomenon at grain boundaries

(2012) M. Lanza et al.   APPLIED PHYSICS LETTERS

Unipolar Resistive Switching Characteristics of a $ \hbox{ZrO}_{2}$ Memory Device With Oxygen Ion Conductor Buffer Layer

(2012) Dai-Ying Lee et al.   IEEE ELECTRON DEVICE LETTERS

Rapid Prediction of RRAM RESET-State Disturb by Ramped Voltage Stress

(2012) Wun-Cheng Luo et al.   IEEE ELECTRON DEVICE LETTERS

A Simplified Model for Resistive Switching of Oxide-Based Resistive Random Access Memory Devices

(2012) Yang Lu et al.   IEEE ELECTRON DEVICE LETTERS

On the Switching Parameter Variation of Metal-Oxide RRAM—Part I: Physical Modeling and Simulation Methodology

(2012) Ximeng Guan et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Impact of TaOx nanolayer at the GeSex/W interface on resistive switching memory performance and investigation of Cu nanofilament

(2012) S. Z. Rahaman et al.   JOURNAL OF APPLIED PHYSICS

Analysis and modeling of resistive switching statistics

(2012) Shibing Long et al.   JOURNAL OF APPLIED PHYSICS

Low-voltage driving solution-processed nickel oxide based unipolar resistive switching memory with Ni nanoparticles

(2012) Doo Hyun Yoon et al.   JOURNAL OF MATERIALS CHEMISTRY

Nanoscale observations of resistive switching high and low conductivity states on TiN/HfO2/Pt structures

(2012) V. Iglesias et al.   MICROELECTRONICS RELIABILITY

Memristive devices for computing

(2012) J. Joshua Yang et al.   Nature Nanotechnology

Nonvolatile resistive switching memories-characteristics, mechanisms and challenges

(2012) Feng PAN et al.   Progress in Natural Science-Materials International

Partial discharge characteristics of interturn insulation used for inverter-fed traction motor under bipolar impulses

(2012) GuangNing Wu et al.   Science China-Technological Sciences

Geometric optimization of electrostatic fields for stable levitation of metallic materials

(2012) Liang Hu et al.   Science China-Technological Sciences

Synthesis of NiFe2O4 nanoparticles by a low temperature microwave-assisted ball milling technique

(2012) Ding Chen et al.   Science China-Technological Sciences

Nitrogen-induced improvement of resistive switching uniformity in a HfO2-based RRAM device

(2012) Hongwei Xie et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Observation of conducting filament growth in nanoscale resistive memories

(2012) Yuchao Yang et al.   Nature Communications

Scaffolds for central nervous system tissue engineering

(2012) Jin He et al.   Frontiers of Materials Science

Anatomy of a Nanoscale Conduction Channel Reveals the Mechanism of a High-Performance Memristor

(2011) Feng Miao et al.   ADVANCED MATERIALS

Engineering oxide resistive switching materials for memristive device application

(2011) Lifeng Liu et al.   APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

Resistive switching of silicon-rich-oxide featuring high compatibility with CMOS technology for 3D stackable and embedded applications

(2011) Ru Huang et al.   APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

Gd-doping effect on performance of HfO2 based resistive switching memory devices using implantation approach

(2011) Haowei Zhang et al.   APPLIED PHYSICS LETTERS

Low power consumption bipolar resistive switching characteristics of ZnO-based memory devices

(2011) Jianwei Zhao Jianwei Zhao et al.   Chinese Optics Letters

An overview of resistive random access memory devices

(2011) YingTao Li et al.   CHINESE SCIENCE BULLETIN

New Set/Reset Scheme for Excellent Uniformity in Bipolar Resistive Memory

(2011) Jubong Park et al.   IEEE ELECTRON DEVICE LETTERS

Improved Resistive Switching Uniformity in $ \hbox{Cu/HfO}_{2}/\hbox{Pt}$ Devices by Using Current Sweeping Mode

(2011) Wentai Lian et al.   IEEE ELECTRON DEVICE LETTERS

Redox Reaction Switching Mechanism in RRAM Device With $\hbox{Pt/CoSiO}_{X}\hbox{/}\hbox{TiN}$ Structure

(2011) Yong-En Syu et al.   IEEE ELECTRON DEVICE LETTERS

Enhancement of Resistive Switching Characteristics in $ \hbox{Al}_{2}\hbox{O}_{3}$-Based RRAM With Embedded Ruthenium Nanocrystals

(2011) Lin Chen et al.   IEEE ELECTRON DEVICE LETTERS

Local resistance switching at grain and grain boundary surfaces of polycrystalline tungsten oxide films

(2011) Da-Shan Shang et al.   NANOTECHNOLOGY

Physical models of size-dependent nanofilament formation and rupture in NiO resistive switching memories

(2011) D Ielmini et al.   NANOTECHNOLOGY

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

(2011) Myoung-Jae Lee et al.   NATURE MATERIALS

Progress in rectifying-based RRAM passive crossbar array

(2011) KangWei Zhang et al.   Science China-Technological Sciences

Effect of high temperature annealing on the performance of MANOS charge trapping memory

(2011) Lin Jin et al.   Science China-Technological Sciences

Analyzing trap generation in silicon-nanocrystal memory devices using capacitance and current measurement

(2011) XiaoNan Yang et al.   Science China-Technological Sciences

Modeling the breakdown statistics of Al2O3/HfO2 nanolaminates grown by atomic-layer-deposition

(2011) A. Conde et al.   SOLID-STATE ELECTRONICS

Controllable Growth of Nanoscale Conductive Filaments in Solid-Electrolyte-Based ReRAM by Using a Metal Nanocrystal Covered Bottom Electrode

(2010) Qi Liu et al.   ACS Nano

Investigation of the electroforming process in resistively switching TiO2 nanocrosspoint junctions

(2010) C. Nauenheim et al.   APPLIED PHYSICS LETTERS

Effect of ZrOx/HfOx bilayer structure on switching uniformity and reliability in nonvolatile memory applications

(2010) Joonmyoung Lee et al.   APPLIED PHYSICS LETTERS

Influence of Nanocrystals on Resistive Switching Characteristic in Binary Metal Oxides Memory Devices

(2010) Yu-Ting Tsai et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

Highly Uniform Bipolar Resistive Switching With $ \hbox{Al}_{2}\hbox{O}_{3}$ Buffer Layer in Robust NbAlO-Based RRAM

(2010) Lin Chen et al.   IEEE ELECTRON DEVICE LETTERS

Model for the Resistive Switching Effect in $ \hbox{HfO}_{2}$ MIM Structures Based on the Transmission Properties of Narrow Constrictions

(2010) Enrique A Miranda et al.   IEEE ELECTRON DEVICE LETTERS

Improvement of Resistive Switching Uniformity by Introducing a Thin GST Interface Layer

(2010) Hangbing Lv et al.   IEEE ELECTRON DEVICE LETTERS

Nonvolatile resistive switching in metal/La-doped BiFeO3/Pt sandwiches

(2010) Mi Li et al.   NANOTECHNOLOGY

Flexible resistance memory devices based on Cu/ZnO:Mg/ITO structure

(2010) Lei Shi et al.   Physica Status Solidi-Rapid Research Letters

Model of metallic filament formation and rupture in NiO for unipolar switching

(2010) Hyung Dong Lee et al.   PHYSICAL REVIEW B

Scaling Theory for Unipolar Resistance Switching

(2010) J. S. Lee et al.   PHYSICAL REVIEW LETTERS

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

Role of TaON interface for CuxO resistive switching memory based on a combined model

(2009)   APPLIED PHYSICS LETTERS

$\hbox{HfO}_{x}$ Bipolar Resistive Memory With Robust Endurance Using AlCu as Buffer Electrode

(2009) Heng Yuan Lee et al.   IEEE ELECTRON DEVICE LETTERS

Improvement of Resistive Switching Properties in $ \hbox{ZrO}_{2}$-Based ReRAM With Implanted Ti Ions

(2009) Qi Liu et al.   IEEE ELECTRON DEVICE LETTERS

Unipolar Resistive Switch Based on Silicon Monoxide Realized by CMOS Technology

(2009) Lijie Zhang et al.   IEEE ELECTRON DEVICE LETTERS

Excellent Switching Uniformity of Cu-Doped $\hbox{MoO}_{x}/\hbox{GdO}_{x}$ Bilayer for Nonvolatile Memory Applications

(2009) Jaesik Yoon et al.   IEEE ELECTRON DEVICE LETTERS

Self-Accelerated Thermal Dissolution Model for Reset Programming in Unipolar Resistive-Switching Memory (RRAM) Devices

(2009) Ugo Russo et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Filament Conduction and Reset Mechanism in NiO-Based Resistive-Switching Memory (RRAM) Devices

(2009) Ugo Russo et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Highly uniform resistive switching characteristics of TiN/ZrO2/Pt memory devices

(2009) B. Sun et al.   JOURNAL OF APPLIED PHYSICS

Investigation of resistive switching in Cu-doped HfO2thin film for multilevel non-volatile memory applications

(2009) Yan Wang et al.   NANOTECHNOLOGY

On the resistive switching mechanisms of Cu/ZrO2:Cu/Pt

(2008) Weihua Guan et al.   APPLIED PHYSICS LETTERS

Improvement of Resistive Switching Characteristics in $\hbox{SrZrO}_{3}$ Thin Films With Embedded Cr Layer

(2008) Chih-Yang Lin et al.   IEEE ELECTRON DEVICE LETTERS

Improvement of Resistive Switching in $\hbox{Cu}_{x} \hbox{O}$ Using New RESET Mode

(2008) M. Yin et al.   IEEE ELECTRON DEVICE LETTERS

Nonpolar Nonvolatile Resistive Switching in Cu Doped $\hbox{ZrO}_{2}$

(2008) Weihua Guan et al.   IEEE ELECTRON DEVICE LETTERS

Gd Doping Improved Resistive Switching Characteristics of TiO2-Based Resistive Memory Devices

(2008) Li-Feng Liu et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Improvement of resistive switching property in a noncrystalline and low-resistance La0.7Ca0.3MnO3thin film by using an Ag–Al alloy electrode

(2008) Weidong Yu et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Constant current stress of Ti-doped Ta2O5on nitrided Si

(2008) A Paskaleva et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Resistive switching in transition metal oxides

(2008) Akihito Sawa   Materials Today