Article
Chemistry, Multidisciplinary
Ke-Jing Lee, Wei-Shao Lin, Li-Wen Wang, Hsin-Ni Lin, Yeong-Her Wang
Summary: This paper presents a sol-gel process-prepared SrZrTiO3 (SZT) thin film for the insulator of resistive random-access memory (RRAM). Aluminum (Al) was embedded in the SZT thin film to enhance the switching characteristics. The RRAM with embedded Al in SZT thin film showed significant improvements in device parameters compared to pure SZT thin-film RRAM.
Article
Chemistry, Physical
Ankit Kumar Yadav, Chandra Prakash, Akhilesh Pandey, Ambesh Dixit
Summary: This study investigates the effects of different top electrodes (Cu, Ag, Al) on resistive random-access memory (RRAM) devices based on the active material Cu2ZnSnS4 (CZTS). It is found that the Ag top electrode exhibits relatively higher stability, with shape factors of 33.61 and 25.02 in the set and reset states, respectively. The transportation of charge carriers is explained through various methods, revealing that intrinsic copper ions dominate at lower applied electric fields in Cu/CZTS/ITO, while the top electrodes (Cu and Ag) dominate at higher electric fields. The diffusion of Cu+ and Ag+ is identified as the main source for resistive switching with Cu and Ag electrodes.
Article
Materials Science, Ceramics
Chandreswar Mahata, Sungjun Kim
Summary: By controlling the Al ratio during atomic layer deposition, significant improvement in resistive switching behavior of Al-doped HfAlO-based RRAM devices was achieved, leading to enhanced on/off ratio and retention properties. Multilevel conductance modulation and synaptic properties of potentiation/depression were successfully demonstrated.
CERAMICS INTERNATIONAL
(2021)
Article
Physics, Applied
Yuan Xing, Brandon Sueoka, Kuan Yew Cheong, Feng Zhao
Summary: This paper presents a new approach to using fructose thin film as the resistive switching layer for memory devices, with comparison between Al and Ag top electrodes. The results show that the Al electrode has a higher on/off ratio, forming voltage, and memory window compared to the Ag electrode.
APPLIED PHYSICS LETTERS
(2021)
Article
Chemistry, Physical
Seung Woo Han, Chul Jin Park, Moo Whan Shin
Summary: This study demonstrates that the diffusion of aluminum atoms and oxygen vacancies significantly affect the resistive switching behavior of zinc oxide-based random resistive access memory (RRAM). The diffusion of aluminum atoms into the zinc oxide layer acts as dopants, producing additional oxygen vacancies and contributing to the formation of conductive filaments. Additionally, the formation of an aluminum oxide layer by the redox reaction between aluminum atoms and oxygen leads to the instability of the reset process.
SURFACES AND INTERFACES
(2022)
Article
Engineering, Electrical & Electronic
Zhenhua Wu, Yinxiao Feng, Yan Liu, Huilie Shi, Shuai Zhang, Zekun Liu, Zhiyu Hu
Summary: A bipolar resistive switching behavior was observed in the Ag/Sb2Te3/Pt heterojunction, with numerical simulation clarifying the electrical conduction mechanism and proposing a synergy model of the conductive filament and Schottky emission. This work enriches the material system of resistive random access memory and promotes a profound understanding of the physical mechanism behind RS behavior for further application in synaptic bionics.
ACS APPLIED ELECTRONIC MATERIALS
(2021)
Article
Engineering, Electrical & Electronic
Xiang Yuan Li, Tae Hyung Park, Seung Dam Hyun, Cheol Seong Hwang
Summary: Depositing a thin ZrO2 layer on the TiO2 layer effectively prevented the active Al electrode from absorbing oxygen, significantly improving the performance of the resistance random access memory. This led to enhancements in endurance, uniformity, and retention, making it more suitable for high-density applications.
ACS APPLIED ELECTRONIC MATERIALS
(2022)
Article
Chemistry, Multidisciplinary
Shaochuan Chen, Ilia Valov
Summary: Redox-based resistive random access memories (ReRAMs) rely on electrochemical processes involving oxidation and reduction within devices. Material selection plays a crucial role in resistive switching properties. The study explores the impact of materials configuration on redox reactions in HfO2-based ECM and VCM systems, highlighting the influence of capping layer materials and electrode configuration on resistive switching characteristics.
ADVANCED MATERIALS
(2022)
Review
Chemistry, Physical
Tuo Shi, Rui Wang, Zuheng Wu, Yize Sun, Junjie An, Qi Liu
Summary: Resistive switching devices are emerging devices with advantages of simple structure, low power consumption, high speed, and good scalability, primarily attributed to the formation of conductive filaments. Integration in a crossbar structure allows for further exploration of various applications.
Article
Polymer Science
Jonghyeon Yun, Daewon Kim
Summary: In an era of rapidly evolving artificial intelligence and 5G communications technologies, resistive random-access memory (RRAM) devices are being considered as next generation in-memory computing devices for wearable devices. This study investigates the influence of a polydopamine (PDA) layer on resistive switching in an aluminum/PDA/aluminum structure. The resistance-switching characteristics are analyzed, including the presence of an Al2O3 layer and changes in oxygen vacancies according to PDA coating time.
Article
Nanoscience & Nanotechnology
Zhe Yu, Yu Zhang, Ling Zhang, He Li, Pengzhan Cai, Zongqing Feng, Liang Zhang, Jinsan Wang, Namin Xiao
Summary: This paper compares the microstructure, mechanical properties, and thermal stability of Al-Cu-Mg-Ag alloys processed by warm rolling and cold rolling with the same strains using SEM, XRD, and TEM. The strengthening mechanism is quantitatively investigated. The results show that warm-rolled samples exhibit improved mechanical properties and higher number densities of Omega plates after artificial aging, resulting in greater increase in yield strength compared to cold-rolled samples. Despite the coarser Omega plates, warm-rolled samples still have higher number densities after heat exposure.
MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING
(2023)
Article
Engineering, Electrical & Electronic
Erika Covi, Wei Wang, Yu-Hsuan Lin, Matteo Farronato, Elia Ambrosi, Daniele Ielmini
Summary: This article presents an extensive study of volatile resistive switching random access memory (RRAM) devices, focusing on the characterization of the electrical properties of Ag/SiOx-based devices and discussing their applicability in neuromorphic systems.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Review
Chemistry, Multidisciplinary
Xianyue Zhao, Stephan Menzel, Ilia Polian, Heidemarie Schmidt, Nan Du
Summary: This review comprehensively examines the state-of-the-art research on resistive switching (RS) in BiFeO3 (BFO)-based memristive devices. It discusses the fabrication techniques for preparing functional BFO layers, analyzes the lattice systems and crystal types responsible for RS behaviors, and reviews the underlying physical mechanisms and effects influencing RS in BFO-based memristive devices. Furthermore, the review explores the applications of BFO devices, evaluates energy consumption in RS, and discusses potential optimization techniques for memristive devices.
Article
Chemistry, Multidisciplinary
Daniil Nikitin, Kateryna Biliak, Pavel Pleskunov, Suren Ali-Ogly, Veronika Cervenkova, Niko Carstens, Blessing Adejube, Thomas Strunskus, Zulfiya Cernochova, Petr Stepanek, Lucia Bajtosova, Miroslav Cieslar, Mariia Protsak, Marco Tosca, Jonathan Lemke, Franz Faupel, Hynek Biederman, Alexander Vahl, Andrei Choukourov
Summary: Neuromorphic engineering attempts to overcome challenges in conventional computation techniques by taking inspiration from neuron assemblies. In this study, Ag/poly(ethylene glycol) (PEG) nanofluids are used to mimic the spatio-temporal reconfiguration of network connections. The unique behavior of Ag/PEG nanofluids shows promise for transitioning to 3D network topologies.
ADVANCED FUNCTIONAL MATERIALS
(2023)
Article
Chemistry, Physical
Arvind Kumar, Narendra Singh, Davinder Kaur
Summary: The present study demonstrates the fabrication of an ITO/MnO2/ITO capacitor-based transparent ReRAM device. This device exhibits high transparency and stable bipolar resistive switching characteristics. It is found that the current in the low resistance state is governed by Ohmic conduction, while the high resistance state is dominated by trap-controlled space charge limited conduction mechanism. The resistive switching phenomenon in this device is attributed to the formation and rupture of conduction filament via electron trapping and de-trapping in oxygen vacancies. Reliability tests show good endurance and long retention for the MnO2-based device, making it a promising transparent electronic device for AI applications.
JOURNAL OF ALLOYS AND COMPOUNDS
(2023)
Review
Chemistry, Multidisciplinary
Tian-Ran Wei, Pengfei Qiu, Kunpeng Zhao, Xun Shi, Lidong Chen
Summary: Ag(2)Q-based materials, such as silver chalcogenides, have complex crystal structures, high carrier mobility, low lattice thermal conductivity, and exceptional plasticity, making them potential thermoelectric materials. This review focuses on the latest advances in this material family, including the understanding of multi-scale structures and peculiar properties, the optimization of thermoelectric performance, and the rational design of new materials. The correlation between composition-phase structure and thermoelectric/mechanical properties is emphasized. Flexible and hetero-shaped thermoelectric prototypes based on Ag(2)Q materials are also demonstrated. Several key problems and challenges for further understanding and optimization of Ag(2)Q-based thermoelectric chalcogenides are proposed.
ADVANCED MATERIALS
(2023)
Article
Physics, Applied
Siyu Wang, Tong Xing, Ping Hu, Tian-Ran Wei, Xudong Bai, Pengfei Qiu, Xun Shi, Lidong Chen
Summary: This study investigates the solid solutions of GeSbTe compounds and explores the variations in crystal structure, electrical conductivity, and thermal transport properties. The addition of bismuth effectively reduces the carrier concentration and decreases the thermal conductivity. GeSb1.5Bi2.5Te7 exhibits the highest thermoelectric figure of merit (zT) with a maximum value of 0.69 at 550 K. These findings contribute to the understanding and development of GeSbTe-based thermoelectric materials.
APPLIED PHYSICS LETTERS
(2022)
Article
Chemistry, Multidisciplinary
Li-Dong Chen, Yuan-Yi Wu, Di Zhang, Shuo-Hui Cao, Lin-Tao Xu, Yao-Qun Li
Summary: This work presents a unique nano-switch based on functional copolymer brushes, which can be modulated by three environmental stimuli (light, pH and temperature) and efficiently control ion transport properties. The synergistic cooperation of the triple factors can fully activate the ionic gate and reversibly control the gating direction. Moreover, this nano-switch can switch transport properties on demand in the face of complex combinations of different factors.
CHEMISTRY-AN ASIAN JOURNAL
(2022)
Article
Engineering, Electrical & Electronic
Zechen Zhang, Sen Gao, Zhiyuan Li, Yichun Xu, Rui Yang, Xiangshui Miao
Summary: Bio-inspired computing architecture based on artificial neurons and synapses is gaining attention for power-efficient artificial intelligence. A compact LIF neuron circuit based on an Ag/Ti/HfSe2-xOy/Pt TS device is designed to achieve bio-inspired burst firing. By adjusting oxidation conditions and embedding a thin Ti layer, device performance is significantly improved, enabling the realization of bionic bursting functions in the LIF neuron.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Article
Multidisciplinary Sciences
Peng Li, Pengfei Qiu, Qing Xu, Jun Luo, Yifei Xiong, Jie Xiao, Niraj Aryal, Qiang Li, Lidong Chen, Xun Shi
Summary: A recent study reports the magneto-thermoelectric properties of a new material, NbSb2, which exhibits large Nernst power factor and high Nernst figure-of-merit, suggesting its potential role in solid-state cooling technologies.
NATURE COMMUNICATIONS
(2022)
Article
Materials Science, Multidisciplinary
Haodong Zeng, Yiwen Zhang, Zhong Wu, Zhenbo Qin, Huiming Ji, Xinjun Liu, Baiyi Li, Wenbin Hu
Summary: By adjusting the substrate temperature, the microstructure of Co-DLC nanocomposite film is modulated, leading to improved magnetic properties and corrosion resistance.
DIAMOND AND RELATED MATERIALS
(2023)
Article
Engineering, Electrical & Electronic
Bowen Chen, Jiaping Yao, Jian Xia, Rui Yang, Xiangshui Miao
Summary: Conventional flexible electronics face challenges in complex fabrication processes and high energy consumption. In-sensor computing based on multifunctional devices, such as strain-sensitive memristors, offers a promising solution for large-scale integration and low-power devices in the future. Researchers have successfully prepared a strain-sensitive memristor based on MoTe2, which exhibits good retention and switching stability. The device has also demonstrated its neuromorphic computing capability by achieving gesture recognition accuracy above 70% even in the presence of 50% background noise. These findings highlight the potential of MoTe2 devices in designing artificially intelligent electronic skins.
IEEE ELECTRON DEVICE LETTERS
(2023)
Article
Materials Science, Multidisciplinary
Wenhao Zhang, Yiwen Zhang, Zhong Wu, Zhenbo Qin, Huiming Ji, Xinjun Liu, Bo Li, Wenbin Hu
Summary: Co-ZnO metal-semiconductor nanocomposite films with high crystallinity of ZnO matrix were prepared by controlling substrate temperature. The increase in substrate temperature led to the growth and aggregation of Co particles into ferromagnetic clusters, resulting in an increase in saturation magnetization. The growth of ferromagnetic clusters also caused a broadening of the MR curve and a shift of the MR field sensitivity peak toward higher fields.
Article
Chemistry, Physical
Siyu Wang, Tong Xing, Tian-Ran Wei, Jiawei Zhang, Pengfei Qiu, Jie Xiao, Dudi Ren, Xun Shi, Lidong Chen
Summary: In this work, a series of Se-alloyed GeSb4Te7 compounds were synthesized and their structures and transport properties were systematically investigated. Raman analysis revealed that Se alloying introduced a new vibrational mode of GeSe2, enhancing the interatomic interaction forces and reducing the carrier concentration. Se alloying also increased the effective mass and improved the Seebeck coefficient of GeSb4Te7. The decrease in carrier concentration reduced the carrier thermal conductivity, resulting in optimized thermoelectric performance.
Review
Chemistry, Multidisciplinary
Ruisi Chen, Lidong Chen, Ziqi Liang
Summary: Metal halide perovskites (MHPs) have unique thermal and electrical properties, making them promising in thermoelectric (TE) applications. However, their poor electrical conductivity hinders their practical use. This Minireview summarizes various doping strategies for MHPs and explores their impacts on thermal and electrical transport. A rational guideline is derived to enhance electrical doping in perovskite TEs.
ADVANCED FUNCTIONAL MATERIALS
(2023)
Article
Physics, Applied
Yifei Xiong, Zhicheng Jin, Tingting Deng, Pengfei Qiu, Lili Xi, Jiong Yang, Xun Shi, Lidong Chen
Summary: In this study, Cu2TiTe3 is identified as a promising thermoelectric material for middle-temperature range, with high electronic quality factor, power factor, and low lattice thermal conductivity.
APPLIED PHYSICS LETTERS
(2023)
Article
Engineering, Electrical & Electronic
Haowei Wang, Yichun Xu, Rui Yang, Xiangshui Miao
Summary: A compact leaky integrate-and-fire (LIF) neuron with a frequency-adaptive function was demonstrated in a simple circuit using the dynamic turn-on delay process of the Ag/Ti/GaSe/Pt/Ti threshold switching memristor. This frequency-adaptive neuron achieved high learning rate and low power consumption in a spiking neural network (SNN) for digital recognition.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Article
Multidisciplinary Sciences
Huanyi Xue, Ruijie Qian, Weikang Lu, Xue Gong, Ludi Qin, Zhenyang Zhong, Zhenghua An, Lidong Chen, Wei Lu
Summary: The study of thermoelectric behaviors in miniatured transistors is crucial for bottom-level thermal management. Recent progress in nanothermetry enables the observation of temperature profiles in nanostructured materials and molecular junctions. This study addresses the thermoelectric effect in silicon and discovers the potential for on-chip refrigeration using silicon itself.
NATURE COMMUNICATIONS
(2023)
Article
Chemistry, Multidisciplinary
Peng Li, Pengfei Qiu, Jie Xiao, Tingting Deng, Lidong Chen, Xun Shi
Summary: Ettingshausen refrigeration, a solid-state refrigeration technology, lacks high-performance polycrystalline thermomagnetic materials. In this study, we report the giant Nernst power factor (PF(N)) and Nernst figure-of-merit (z(N)) of polycrystalline topological semimetal NbSb2, which are record-high values among polycrystalline thermomagnetic materials. The high thermomagnetic performance of NbSb2 is attributed to its large and unsaturated Nernst thermopower under a high magnetic field. Polycrystalline NbSb2, with its excellent thermomagnetic performance and low-cost fabrication process, is a competitive candidate material for Ettingshausen refrigeration.
ENERGY & ENVIRONMENTAL SCIENCE
(2023)
Article
Automation & Control Systems
Yichun Xu, Sen Gao, Zhiyuan Li, Rui Yang, Xiangshui Miao
Summary: This article introduces an artificial retina circuit for biomimetic machine vision systems, which can adapt to different light conditions and achieve adaptive perception. By using adaptive VO2 memristors, the artificial neural circuit demonstrates time-varying activation and inhibition characteristics, simulating the dynamic light amplitude ranges of biological vision systems. This development provides a universal approach to design and fabricate environmentally adaptable artificial systems.
ADVANCED INTELLIGENT SYSTEMS
(2022)
