期刊
APPLIED PHYSICS LETTERS
卷 100, 期 14, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3700730
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资金
- Semiconductor Research Corporation (SRC)
- Ministry of Knowledge Economy
- National Research Foundation of Korea (NRF)
- Korea government (MEST) [2011-0018646]
We demonstrate improved switching uniformity in resistive random-access memory (RRAM) containing metal-doped electrolyte due to thermally agglomerated metallic filaments. Rapid thermal annealing (RTA) produced copper-doped carbon (CuC) devices that exhibited better switching parameters, such as on/off resistance and set/reset voltage, than a control device. High-resolution transmission electron microscopy, electron dispersive spectroscopy, and conductive atomic force microscopy revealed that Cu atoms were agglomerated during the RTA process and formed a Cu filament in the CuC film. Consequently, the forming process can be eliminated, which is desirable for practical RRAM applications. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3700730]
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