Article
Engineering, Electrical & Electronic
Tanushree Ghosh, Suchita Kandpal, Devesh K. Pathak, Manushree Tanwar, Chanchal Rani, Anjali Chaudhary, Rajesh Kumar
Summary: The raw Aloe Vera flower extract displays memristive behavior with high conductivity, capable of switching between different memory states with impressive On/Off ratio and cyclability. This could pave the way for designing solid-state herbal memristors using active molecules present in Aloe Vera flowers.
ACS APPLIED ELECTRONIC MATERIALS
(2021)
Article
Materials Science, Multidisciplinary
Linwei Yan, Liuxia Ruan, Feifei Luo, Junwei Tong, Caixiang Sun, Yadan Zheng, Xiaoli Han, Yanlin Zhang, Xianmin Zhang
Summary: In this study, nickel ions are utilized to limit the excessive iodine vacancies in the methylammonium lead halide perovskite film, resulting in improved resistive switching performance. The devices based on the doped film show higher ON/OFF ratio and endurance compared to the devices without doping.
Article
Materials Science, Multidisciplinary
Roberto Gonzalez-Rodriguez, Evan Hathaway, Noah Hurley, Yuankun Lin, Jingbiao Cui
Summary: In this study, graphene was successfully doped with both N and a combination of Al and N using a microwave process suitable for large-scale production. Characterization methods confirmed the successful doping, and it was found that doping and co-doping increased the conductivity of graphene. The doped graphene also demonstrated well-defined resistive memory properties when included in a sandwich structure.
MATERIALS TODAY COMMUNICATIONS
(2023)
Article
Chemistry, Multidisciplinary
Jing Xu, Yuanyuan Zhu, Yong Liu, Hongjun Wang, Zhaorui Zou, Hongyu Ma, Xianke Wu, Rui Xiong
Summary: This study investigates the improvement of on/off ratio, retention time, and stability in VCM devices through N-doping. By forming oxygen vacancy and N clusters, the ionic conductivity and total energy of the system are reduced, leading to increased on/off ratio and stability. Therefore, N-doping is an effective approach to optimize device performance.
Article
Chemistry, Physical
Young-Woong Song, Yun-Hee Chang, Jaeho Choi, Min-Kyu Song, Jeong Hyun Yoon, Sein Lee, Se-Yeon Jung, Wooho Ham, Jeong-Min Park, Hyun-Suk Kim, Jang-Yeon Kwon
Summary: Artificial intelligence has the potential to replace human mental labor, but it currently requires high computing resources and power supply. This study introduces metal cation doping into tantalum oxide-based RRAM to reveal the ionic hopping behavior and alleviate the nonlinearity conductance modulation issue. The results show a significant improvement in the resistive switching window and conductance modulation.
APPLIED SURFACE SCIENCE
(2023)
Article
Physics, Applied
Yu-Li Chen, Babu Balraj, Pei-Fang Chung, Chandrasekar Sivakumar, Wen-Jay Lee, Mon-Shu Ho
Summary: Resistive Random Access Memories (ReRAMs) are promising candidates for nonvolatile memory due to resistive switching in high-k dielectric layers. Nonequilibrium molecular dynamics simulations with charge equilibration method were used to study electrochemical reactions of ReRAMs, showing that applying external electric field on grain boundaries is crucial for resistive switching. The study provides details of resistance switching mechanisms at atom length scale and picosecond timescale, suggesting useful aspects for future development of ReRAM technology.
APPLIED PHYSICS LETTERS
(2021)
Article
Nanoscience & Nanotechnology
Yang Li, Wei Wang, Di Zhang, Maria Baskin, Aiping Chen, Shahar Kvatinsky, Eilam Yalon, Lior Kornblum
Summary: Resistive switching devices, utilizing a simple and scalable material system of conductive oxide interfaces, have been developed for memory and computation. These devices offer advantages in performance and energy efficiency, and the conductive oxide interface serves both as the bottom electrode and as a reservoir of defects for switching. This new device, based on scalable and CMOS-compatible fabrication processes, opens up new design possibilities.
ADVANCED ELECTRONIC MATERIALS
(2023)
Article
Engineering, Electrical & Electronic
Ruofei Hu, Jianshi Tang, Yue Xi, Zhixing Jiang, Yuyao Lu, Bin Gao, He Qian, Huaqiang Wu
Summary: A nitrogen-oxyanion-doped hafnium oxide RRAM with improved forming voltage, on/off ratio, and endurance is demonstrated. The critical electric field of N-doped RRAM for forming is 40% lower than that of undoped RRAM. The N-doped RRAM achieves 3x improvement in on/off ratio and 10x improvement in endurance at the forming voltage of 2 V, which is suitable for integration with advanced silicon technology nodes.
IEEE ELECTRON DEVICE LETTERS
(2023)
Article
Engineering, Electrical & Electronic
Kamilya Smagulova, Mohammed E. Fouda, Fadi Kurdahi, Khaled N. Salama, Ahmed Eltawil
Summary: Deep neural networks (DNNs) can learn real-world data and make real-time decisions, but are hindered by software and hardware limitations. Emerging nonvolatile memory (NVM) devices and the compute-in-memory (CIM) paradigm offer a new hardware architecture for efficient DNN acceleration. This survey reviews ReRAM-based DNN many-core accelerators, highlighting their superiority over CMOS counterparts and the need for new performance metrics and benchmarking standards.
PROCEEDINGS OF THE IEEE
(2023)
Article
Engineering, Electrical & Electronic
Shalu Saini, Anil Lodhi, Anurag Dwivedi, Arpit Khandelwal, Shree Prakash Tiwari
Summary: High-performance flexible resistive random access memory (RRAM) devices were achieved by engineering the switching layer with PVK:MoS2 composite and TiO2 bilayer. These devices demonstrated excellent switching performance, high repeatability, and retention time, and maintained high stability even under bending conditions.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Article
Engineering, Electrical & Electronic
Tran Thi Be Lan, Yu-Teng Li, An-Cheng Aidan Sun, Hsi-Chuan Lu, Sea-Fue Wang
Summary: This study aimed to characterize the resistive memory switching mechanism of cerium dioxide (CeO2) thin insulating films with different dopants, revealing that metallic Gd and Zr were more effective than Ca in CeO2 films. XPS analysis indicated that oxygen played a crucial role in generating conductive filaments in doped films.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2022)
Article
Multidisciplinary Sciences
Sera Kwon, Min-Jung Kim, Dong-Hyeok Lim, Kwangsik Jeong, Kwun-Bum Chung
Summary: The resistive switching behavior of solution processed SiOx device was improved by inserting TiO2 nanoparticles. The SiOx@TiO2 NPs device showed remarkable switching characteristics including higher SET/RESET ratio, lower operating voltages, improved cycle-to-cycle variability, faster switching speed, and multiple-RESET states. The improved resistive switching was attributed to the difference in formation/rupture of the conductive path and the control of resistance and switching voltage achieved by TiO2 NPs.
SCIENTIFIC REPORTS
(2022)
Article
Materials Science, Multidisciplinary
Shuliang Wu, Haixia Gao, Yuxin Sun, Jingshu Guo, Yiwei Duan, Mengyi Qian, Xiaohua Ma, Yintang Yang
Summary: This article analyzes the effect of Ta-doping position on the performance of SiNx-based resistive random access memories by comparing the electrical properties and conduction mechanisms of the devices. The test results show that as the doping position moves down in the resistive switching layer, the resistance window increases during the resistive switch process, but the consistency of parameter distribution decreases. The conduction mechanism of all Ta-doped devices behaves as space charge limited current. The analysis of the RS model suggests that Ta in the RS layer connects and disconnects with localized conductive filaments, and the doping layer's adjustment ability on the conductive channel affects device stability when the doping position moves up. Proper Ta doping in the middle of the RS layer allows the device to have a large resistance window with relatively stable characteristics.
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS
(2023)
Article
Chemistry, Physical
June Park, Euyjin Park, Hyun-Yong Yu
Summary: In this study, a thermally stable memristor with nitrogen-doped hafnium oxide as an active layer is proposed, which exhibits normal operation even under high temperature conditions.
APPLIED SURFACE SCIENCE
(2022)
Article
Chemistry, Analytical
Zhiqiang Yu, Xu Han, Jiamin Xu, Cheng Chen, Xinru Qu, Baosheng Liu, Zijun Sun, Tangyou Sun
Summary: This paper analyzes the effect of nitrogen annealing on the resistive switching characteristics of the rutile TiO2 nanowire-based W/TiO2/FTO memory device. The W/TiO2/FTO memory device exhibits a nonvolatile bipolar resistive switching behavior with a high resistance ratio (R-HRS/R-LRS) of about two orders of magnitude. The conduction behaviors of the W/TiO2/FTO memory device are attributed to the Ohmic conduction mechanism and the Schottky emission in the low resistance state and the high resistance state, respectively. Furthermore, the R-HRS/R-LRS of the W/TiO2/FTO memory device is obviously increased from about two orders of magnitude to three orders of magnitude after the rapid nitrogen annealing treatment. In addition, the change in the W/TiO2 Schottky barrier depletion layer thickness and barrier height modified by the oxygen vacancies at the W/TiO2 interface is suggested to be responsible for the resistive switching characteristics of the W/TiO2/FTO memory device. This work demonstrates the potential applications of the rutile TiO2 nanowire-based W/TiO2/FTO memory device for high-density data storage in nonvolatile memory devices.
Article
Engineering, Electrical & Electronic
Shufeng Ren, Mengwei Si, Kai Ni, Xin Wan, Jin Chen, Sungjae Chang, Xiao Sun, En Xia Zhang, Robert A. Reed, Daniel M. Fleetwood, Peide Ye, Sharon Cui, T. P. Ma
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
(2015)
Article
Physics, Applied
N. Gong, X. Sun, H. Jiang, K. S. Chang-Liao, Q. Xia, T. P. Ma
APPLIED PHYSICS LETTERS
(2018)
Article
Physics, Applied
X. Sun, O. I. Saadat, K. S. Chang-Liao, T. Palacios, S. Cui, T. P. Ma
APPLIED PHYSICS LETTERS
(2013)
Article
Engineering, Electrical & Electronic
Xiao Sun, Sharon Cui, Alireza Alian, Guy Brammertz, Clement Merckling, Dennis Lin, T. P. Ma
IEEE ELECTRON DEVICE LETTERS
(2012)
Article
Engineering, Electrical & Electronic
Xiao Sun, T. P. Ma
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY
(2013)
Article
Engineering, Electrical & Electronic
Isaak K. Samsel, En Xia Zhang, Nicholas C. Hooten, Erik D. Funkhouser, William G. Bennett, Robert A. Reed, Ronald D. Schrimpf, Michael W. McCurdy, Daniel M. Fleetwood, Robert A. Weller, Gyorgy Vizkelethy, Xiao Sun, Tso-Ping Ma, Omair I. Saadat, Tomas Palacios
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
(2013)
Article
Engineering, Electrical & Electronic
Xiao Sun, Omair I. Saadat, Jin Chen, E. Xia Zhang, Sharon Cui, Tomas Palacios, Dan M. Fleetwood, T. P. Ma
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
(2013)
Article
Engineering, Electrical & Electronic
X. Sun, F. Xue, J. Chen, E. X. Zhang, S. Cui, J. Lee, D. M. Fleetwood, T. P. Ma
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
(2013)
Article
Engineering, Electrical & Electronic
Swagath Venkataramani, Xiao Sun, Naigang Wang, Chia-Yu Chen, Jungwook Choi, Mingu Kang, Ankur Agarwal, Jinwook Oh, Shubham Jain, Tina Babinsky, Nianzheng Cao, Thomas Fox, Bruce Fleischer, George Gristede, Michael Guillorn, Howard Haynie, Hiroshi Inoue, Kazuaki Ishizaki, Michael Klaiber, Shih-Hsien Lo, Gary Maier, Silvia Mueller, Michael Scheuermann, Eri Ogawa, Marcel Schaal, Mauricio Serrano, Joel Silberman, Christos Vezyrtzis, Wei Wang, Fanchieh Yee, Jintao Zhang, Matthew Ziegler, Ching Zhou, Moriyoshi Ohara, Pong-Fei Lu, Brian Curran, Sunil Shukla, Vijayalakshmi Srinivasan, Leland Chang, Kailash Gopalakrishnan
PROCEEDINGS OF THE IEEE
(2020)
Article
Engineering, Electrical & Electronic
Sae Kyu Lee, Ankur Agrawal, Joel Silberman, Matthew Ziegler, Mingu Kang, Swagath Venkataramani, Nianzheng Cao, Bruce Fleischer, Michael Guillorn, Matthew Cohen, Silvia M. Mueller, Jinwook Oh, Martin Lutz, Jinwook Jung, Siyu Koswatta, Ching Zhou, Vidhi Zalani, Monodeep Kar, James Bonanno, Robert Casatuta, Chia-Yu Chen, Jungwook Choi, Howard Haynie, Alyssa Herbert, Radhika Jain, Kyu-Hyoun Kim, Yulong Li, Zhibin Ren, Scot Rider, Marcel Schaal, Kerstin Schelm, Michael R. Scheuermann, Xiao Sun, Hung Tran, Naigang Wang, Wei Wang, Xin Zhang, Vinay Shah, Brian Curran, Vijayalakshmi Srinivasan, Pong-Fei Lu, Sunil Shukla, Kailash Gopalakrishnan, Leland Chang
Summary: The article presents a 7-nm four-core mixed-precision artificial intelligence chip that supports four compute precisions, demonstrating high power efficiency and performance while meeting diverse application demands.
IEEE JOURNAL OF SOLID-STATE CIRCUITS
(2022)
Proceedings Paper
Audiology & Speech-Language Pathology
Andrea Fasoli, Chia-Yu Chen, Mauricio Serrano, Xiao Sun, Naigang Wang, Swagath Venkataramani, George Saon, Xiaodong Cui, Brian Kingsbury, Wei Zhang, Zoltan Tuske, Kailash Gopalakrishnan
Summary: The study investigates the impact of aggressive low-precision representations on two families of large LSTM-based architectures for Automatic Speech Recognition. It shows that with appropriate choice of quantizers and initializations, minimal accuracy loss can be achieved while improving recognition performance and limiting computational time. The quantization strategy demonstrated in the study limits degradation in 4-bit inference to 1.3% on challenging RNN-T models.
Proceedings Paper
Engineering, Electrical & Electronic
Ankur Agrawal, Sae Kyu Lee, Joel Silberman, Matthew Ziegler, Mingu Kang, Swagath Venkataramani, Nianzheng Cao, Bruce Fleischer, Michael Guillorn, Matthew Cohen, Silvia Mueller, Jinwook Oh, Martin Lutz, Jinwook Jung, Siyu Koswatta, Ching Zhou, Vidhi Zalani, James Bonanno, Robert Casatuta, Chia-Yu Chen, Jungwook Choi, Howard Haynie, Alyssa Herbert, Radhika Jain, Monodeep Kar, Kyu-Hyoun Kim, Yulong Li, Zhibin Ren, Scot Rider, Marcel Schaal, Kerstin Schelm, Michael Scheuermann, Xiao Sun, Hung Tran, Naigang Wang, Wei Wang, Xin Zhang, Vinay Shah, Brian Curran, Vijayalakshmi Srinivasan, Pong-Fei Lu, Sunil Shukla, Leland Chang, Kailash Gopalakrishnan
2021 IEEE INTERNATIONAL SOLID-STATE CIRCUITS CONFERENCE (ISSCC)
(2021)
Proceedings Paper
Computer Science, Hardware & Architecture
Jinwook Oh, Sae Kyu Lee, Mingu Kang, Matthew Ziegler, Joel Silberman, Ankur Agrawal, Swagath Venkataramani, Bruce Fleischer, Michael Guillorn, Jungwook Choi, Wei Wang, Silvia Mueller, Shimon Ben-Yehuda, James Bonanno, Nianzheng Cao, Robert Casatuta, Chia-Yu Chen, Matt Cohen, Ophir Erez, Thomas Fox, George Gristede, Howard Haynie, Vicktoria Ivanov, Siyu Koswatta, Shih-Hsien Lo, Martin Lutz, Gary Maier, Alex Mesh, Yevgeny Nustov, Scot Rider, Marcel Schaal, Michael Scheuermann, Xiao Sun, Naigang Wang, Fanchieh Yee, Ching Zhou, Vinay Shah, Brian Curran, Vijayalakshmi Srinivasan, Pong-Fei Lu, Sunil Shukla, Kailash Gopalakrishnan, Leland Chang
2020 IEEE SYMPOSIUM ON VLSI CIRCUITS
(2020)
Proceedings Paper
Computer Science, Artificial Intelligence
Ankur Agrawal, Silvia M. Mueller, Bruce M. Fleischer, Jungwook Choi, Naigang Wang, Xiao Sun, Kailash Gopalakrishnan
2019 IEEE 26TH SYMPOSIUM ON COMPUTER ARITHMETIC (ARITH)
(2019)
Proceedings Paper
Engineering, Electrical & Electronic
Ismail Bayram, Enes Eken, Xue Wang, Xiao Sun, T. P. Ma, Yiran Chen
2016 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS)
(2016)
