Improved Resistive Switching Uniformity in $ \hbox{Cu/HfO}_{2}/\hbox{Pt}$ Devices by Using Current Sweeping Mode

Investigation of the electroforming process in resistively switching TiO2 nanocrosspoint junctions

(2010) C. Nauenheim et al.   APPLIED PHYSICS LETTERS

Improvement of Resistive Switching Uniformity by Introducing a Thin GST Interface Layer

(2010) Hangbing Lv et al.   IEEE ELECTRON DEVICE LETTERS

Resistance Controllability of $\hbox{Ta}_{2} \hbox{O}_{5}/\hbox{TiO}_{2}$ Stack ReRAM for Low-Voltage and Multilevel Operation

(2010) M. Terai et al.   IEEE ELECTRON DEVICE LETTERS

Improved Switching Uniformity and Speed in Filament-Type RRAM Using Lightning Rod Effect

(2010) Jubong Park et al.   IEEE ELECTRON DEVICE LETTERS

Formation of multiple conductive filaments in the Cu/ZrO2:Cu/Pt device

(2009) Qi Liu et al.   APPLIED PHYSICS LETTERS

RESET Mechanism of TiOx Resistance-Change Memory Device

(2009) Wei Wang et al.   IEEE ELECTRON DEVICE LETTERS

Impact of Electrode Materials on Resistive-Switching Memory Programming

(2009) U. Russo et al.   IEEE ELECTRON DEVICE LETTERS

Self-Accelerated Thermal Dissolution Model for Reset Programming in Unipolar Resistive-Switching Memory (RRAM) Devices

(2009) Ugo Russo et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Investigation of resistive switching in Cu-doped HfO2thin film for multilevel non-volatile memory applications

(2009) Yan Wang et al.   NANOTECHNOLOGY

On the resistive switching mechanisms of Cu/ZrO2:Cu/Pt

(2008) Weihua Guan et al.   APPLIED PHYSICS LETTERS