Electronic Structure of Oxygen Interstitial Defects in Amorphous In-Ga-Zn-O Semiconductors and Implications for Device Behavior
出版年份 2015 全文链接
标题
Electronic Structure of Oxygen Interstitial Defects in Amorphous In-Ga-Zn-O Semiconductors and Implications for Device Behavior
作者
关键词
-
出版物
Physical Review Applied
Volume 3, Issue 4, Pages -
出版商
American Physical Society (APS)
发表日期
2015-04-17
DOI
10.1103/physrevapplied.3.044008
参考文献
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