Origins of High Mobility and Low Operation Voltage of Amorphous Oxide TFTs: Electronic Structure, Electron Transport, Defects and Doping

标题
Origins of High Mobility and Low Operation Voltage of Amorphous Oxide TFTs: Electronic Structure, Electron Transport, Defects and Doping
作者
关键词
-
出版物
Journal of Display Technology
Volume 5, Issue 7, Pages 273-288
出版商
Institute of Electrical and Electronics Engineers (IEEE)
发表日期
2009-07-01
DOI
10.1109/jdt.2009.2021582

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