Effect of high-pressure oxygen annealing on negative bias illumination stress-induced instability of InGaZnO thin film transistors

标题
Effect of high-pressure oxygen annealing on negative bias illumination stress-induced instability of InGaZnO thin film transistors
作者
关键词
-
出版物
APPLIED PHYSICS LETTERS
Volume 98, Issue 10, Pages 103509
出版商
AIP Publishing
发表日期
2011-03-11
DOI
10.1063/1.3564882

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