Comparison of Ultraviolet Photo-Field Effects between Hydrogenated Amorphous Silicon and Amorphous InGaZnO4Thin-Film Transistors

标题
Comparison of Ultraviolet Photo-Field Effects between Hydrogenated Amorphous Silicon and Amorphous InGaZnO4Thin-Film Transistors
作者
关键词
-
出版物
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 48, Issue 1, Pages 010203
出版商
Japan Society of Applied Physics
发表日期
2009-01-20
DOI
10.1143/jjap.48.010203

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