Instability of amorphous oxide semiconductors via carrier-mediated structural transition between disorder and peroxide state
出版年份 2012 全文链接
标题
Instability of amorphous oxide semiconductors via carrier-mediated structural transition between disorder and peroxide state
作者
关键词
-
出版物
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
Volume 249, Issue 6, Pages 1277-1281
出版商
Wiley
发表日期
2012-02-13
DOI
10.1002/pssb.201147557
参考文献
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注意:仅列出部分参考文献,下载原文获取全部文献信息。- Transition of dominant instability mechanism depending on negative gate bias under illumination in amorphous In-Ga-Zn-O thin film transistor
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