Photon-accelerated negative bias instability involving subgap states creation in amorphous In–Ga–Zn–O thin film transistor
出版年份 2010 全文链接
标题
Photon-accelerated negative bias instability involving subgap states creation in amorphous In–Ga–Zn–O thin film transistor
作者
关键词
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出版物
APPLIED PHYSICS LETTERS
Volume 97, Issue 18, Pages 183502
出版商
AIP Publishing
发表日期
2010-11-04
DOI
10.1063/1.3510471
参考文献
相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。- O-vacancy as the origin of negative bias illumination stress instability in amorphous In–Ga–Zn–O thin film transistors
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- Improvement in the photon-induced bias stability of Al–Sn–Zn–In–O thin film transistors by adopting AlOx passivation layer
- (2010) Shinhyuk Yang et al. APPLIED PHYSICS LETTERS
- The influence of SiOx and SiNx passivation on the negative bias stability of Hf–In–Zn–O thin film transistors under illumination
- (2010) Joon Seok Park et al. APPLIED PHYSICS LETTERS
- Spectroscopic Investigation on the Origin of Photoinduced Carrier Generation in Semiconducting InGaO and InGaZnO Films
- (2010) Deok-Yong Cho et al. Journal of Physical Chemistry C
- Origins of threshold voltage shifts in room-temperature deposited and annealed a-In–Ga–Zn–O thin-film transistors
- (2009) Kenji Nomura et al. APPLIED PHYSICS LETTERS
- Gate-bias stress in amorphous oxide semiconductors thin-film transistors
- (2009) M. E. Lopes et al. APPLIED PHYSICS LETTERS
- The effect of moisture on the photon-enhanced negative bias thermal instability in Ga–In–Zn–O thin film transistors
- (2009) Kwang-Hee Lee et al. APPLIED PHYSICS LETTERS
- Light Effects on the Bias Stability of Transparent ZnO Thin Film Transistors
- (2009) Jae-Heon Shin et al. ETRI JOURNAL
- First-principles study of native point defects in crystalline indium gallium zinc oxide
- (2009) Hideyuki Omura et al. JOURNAL OF APPLIED PHYSICS
- Electronic structure of the amorphous oxide semiconductor a-InGaZnO4-x: Tauc-Lorentz optical model and origins of subgap states
- (2009) Toshio Kamiya et al. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
- Transparent and Photo-stable ZnO Thin-film Transistors to Drive an Active Matrix Organic-Light- Emitting-Diode Display Panel
- (2008) Sang-Hee K. Park et al. ADVANCED MATERIALS
- Subgap states in transparent amorphous oxide semiconductor, In–Ga–Zn–O, observed by bulk sensitive x-ray photoelectron spectroscopy
- (2008) Kenji Nomura et al. APPLIED PHYSICS LETTERS
- Origin of threshold voltage instability in indium-gallium-zinc oxide thin film transistors
- (2008) Jae Kyeong Jeong et al. APPLIED PHYSICS LETTERS
- Bias stress stability of indium gallium zinc oxide channel based transparent thin film transistors
- (2008) A. Suresh et al. APPLIED PHYSICS LETTERS
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